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Recent experiment shows that scandium (Sc) can make a good performance contact with carbon nanotube (CNT) to fabricate n-type field effect transistor (n-FET). In this paper, we study the Schottky barrier (SB) of scandium (Sc) and palladium (Pd) with a (8,0) single-wall CNT (SWCNT) using first-principles calculation. We find that the p-type SB height (SBH) of the Pd-CNT contact is about 0.34 eV which...
A simple procedure to determine source/drain series resistance and effective channel length has been developed for advanced MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 ??m. The parameters extracted with this procedure have been validated...
Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination (G-R) current. It is observed that the stress induced interface states result in the shift of the peak G-R current (??Ipeak) in the body current (Ib) versus gate voltage (Vg) characteristic, therefore the variation of interface states with stress time was calculated. In the hot carrier injection...
In this paper, the CZT oxidized layers on cadmium zinc telluride (CZT) wafer formed by two-step chemical passivation process (KOH-KCl + NH4F/H2O2) were investigated by using XRD, ED-XRF, SEM. The results show that the oxidized layer obtained by using this process has a very uniform and compact morphology and consists mainly of TeO2, TeO3 and CdTeO3. In particular, the thickness of the oxidized layer...
Recent advances of a highly scalable bridge phase change memory cell are presented. To fabricate and characterize highly scaled devices, designs in both the process procedure and the testing algorism are considered extensively. We also compare the characteristics of the devices made from different types of materials. The experimental data reveal the superior scaling properties of the bridge phase...
ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties...
Evidence of mobile, positive charges (holes) on the top surface of GaN HFET is found by conducting C-V measurement of a MIS HEMT diode. Significantly improved understanding of the effects of built-in electric polarization and doping on III-nitride heterojunction device structure electrical properties has been made. The result also confirms that removal of surface mobile holes is the root cause for...
This work reports, high electron mobility transistors (HEMTs) using a dilute antimony In0.2Ga0.8AsSb channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting...
We report the successful assessment of both dielectric semiconductor interface, and transistor channel sheet charge densities through the device leakage current characteristics of a MIS GaN HEMT structure. The unconventional test vehicle and procedure described here provide ferroelectric hetero-junction device properties not obtainable using traditional characterization tools.
In this paper, a 3.24 GHz~4.56 GHz wide-band voltage-controlled oscillator (VCO) fabricated in a 0.18 ??m 1P6M CMOS process is presented. This VCO is designed with a CMOS complementary-Gm oscillator topology, features two accumulation mode MOS varactors, and body-biased pMOSs. With 1.8 V power supply, when center frequency is 3.547 GHz, the phase noise is -119.2 dBc/Hz at 1 MHz offset. The oscillation...
In this paper, a 1.2 V low-power CMOS current-reused voltage-controlled oscillator (VCO) for IEEE 802.16e is presented. Two drain resistors are used to improve magnitude symmetry of output signals. The design is based on the TSMC 0.18 ??m mixed signal/RF process. The output frequencies range from 2.39 GHz to 2.21 GHz with the controlled voltage from 0 V to 1.2 V. The measured output power is -4.2...
A wide-band current mirror for precision biasing has been fabricated in a complementary SOI bipolar process. The mirror is a feedback circuit using common-base transistor in the loop to compensate for base current loss.
The prototype of a prism-coupled Kretschmann surface plasmon resonance (SPR) chip was fabricated by suing bulk silicon micromachining and polymer replication, and the chip is constructed with the polymer-prism array, metal layer and micro-channel. The performance of PDMS SPR chip was investigated at different incident wavelengths, when the chip is applied to test samples, including air, water and...
This paper discuss the characterization and the performance of two types of ISFET, which have different gate design. Isfet5 has single gate while Isfet7 has multi-finger gate. The characterization of ISFET is analyzed from the IdVd and IdVg curve, and by measuring the threshold voltage, Vth and response-time of ISFET in order to determine the sensitivity of ISFET. Beside, the hysteresis of ISFET is...
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