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In this paper, a novel power device named as RESURF Dielectric Inserted (REDI) LDMOS is put forward. It is fully compatible with standard CMOS technology, which can sharply reduce the cost. In this novel REDI LDMOS, a RESURF structure and a dielectric region are inserted at the suitable position of the drift region to reconstruct the electric field and the electric potential distributions of the channel...
An RF n-MOST model was developed based on PSP model, which is considered as one of standard surface potential based compact model for deep-submicron applications. The RF sub-circuit is presented after analyzing the structure and layout of a specific RF n-MOST, and the parasitic parameters extracted analytically. Validated in DC, AC small-signal, and large-signal analysis, it proves that an excellent...
This paper presents the fundamentals and recent progresses of 4-port based error correction and parasitics de-embedding techniques we developed for high frequency transistor measurements. RF CMOS data from 2 to 110 GHz will be shown to illustrate various techniques.
In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH4, N2O and C2F6 precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film...
Large current carrying capabilities of AlN/GaN/InN based heterostructures and high breakdown voltages make this materials system uniquely suited for applications in high power and/or high frequency electronic devices, including power amplifiers, broadband amplifiers, power switches, and radio frequency switches. AlGaN/GaN insulated gate transistors have additional advantages of extremely low leakage...
An improved 3D tri-gate 4H-SiC MESFETs structure with recessed drift region was proposed. The recessed drift region of the proposed structure is to reduce the channel thickness between gate and drain to increase breakdown voltage as well as to eliminate gate depletion layer extension to source/drain to decrease gate-source capacitance. The DC and RF electrical characteristics of the proposed structure...
On-chip interconnects form the bottleneck of VLSI system performance. As technology progresses, VLSI on-chip interconnects encounter increasingly significant challenges, such as (1) signal attenuation and (2) crosstalk coupling. This paper proposes two analog/RF design techniques for high performance nanoelectronic on-chip interconnects: (1) application of distributed amplifiers for signal attenuation...
The escalating demand for technology integration in and around CMOS devices and the introduction of a large variety of new processes and structures to achieve challenging new product features is yielding new systems with an increasing level of test complexity. This test technique can be easily incorporated in the current digital test techniques using ATE (Automated Test Equipment) and therefore allowing...
This paper discusses a novel RF Built-in-Self-Test (RF-BiST) targeting to replace the traditionally expensive and time-consuming RF parametric phase error test on a GSM/EDGE Digital Radio Processor (DRP) radio transceiver. The verification of the RF BiST in a production environment and a comparison of the internal BiST vs. the current test in are presented, which validates the RF BiST as an accepted...
A high-speed low-power programmable pulse-swallow divider is designed and fabricated in SMIC 0.18-??m CMOS process. Two critical paths that limit the operating frequency are analyzed. The proposed prescaler based on a shift-register-ring is insensitive to the Modulus Control (MC) during its first few input cycles, and thus wrong divide ratio caused by the MC??s delay can be avoided. The proposed pulse...
The paper describes integrated CMOS-MEMS technology and its applications. We discuss the features of integrated complementary metal-oxide-semi-conductor-microelectromechanical systems (CMOS- MEMS). The prospect of this integration is also presented. A MEMS fingerprint sensor and a low-voltage radio frequency (RF) CMOS-MEMS switch are the case studies discussed. In conclusion, it is confirmed that...
A novel DC-contact series RF MEMS switch using Al/Au composite membrane bridge is present. The warping problem of cantilever beam under residual stress is avoided by introduction of the slanting beam. Au-Au direct contact is achieved by using Al/Au composite membrane. The process is based on Borofloat?? glass substrate and resistance is used to isolate the crosstalk between the RF signal and DC driven...
We present the optimal planar microcoils with inner radius in several hundreds of microns. The microcoils are used in the RF transceiver probe in NMR experiment. At a certain condition of experiment the geometry of microcoil is optimized by analytic simulation about the signal-to-noise ratio while varying the number of turns. The fabrication of microcoils has been finished by photolithography technique...
This paper presents a wireless, subfascially implantable electromyogram (EMG) sensing microsystem for intelligent myoelectric control of powered prostheses. The implantable system consists of a custom-designed ASIC, an RF telemetry coil, and two Pt-Ir epimysial EMG electrodes, and is capable of wirelessly transmitting digitized EMG data to an external telemeter mounted in a prosthetic socket. The...
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