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Si surface properties and electrical characteristics in n- and p-MOSFETs with 2 - 6 degree tilted off-axis (110) channel were reported. The transconductance of p-MOSFET with off-axis channel was significantly degraded compared with that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved compared with that of normal channel. The changes were larger than those observed...
Source/Drain (S/D) engineering in Ge MOSFETs is a complex interplay of various factors, including ion implantation and annealing conditions, electrical activation, the defectiveness of the starting substrate and the contact technology. Some of these aspects will be covered in the following manuscript. It is shown that the formation of highly n-type doped S/D regions suffers from a concentration-enhanced...
The device characteristics and manufacturability of ultra-thin oxynitride have been systemically studied in this paper for CMOS applications. We have found that the transistor with plasma oxynitride gate dielectrics gives better pFET performance in terms of drive current, mobility, threshold voltage and leakage current as compared to the one with thermal oxynitride. For nFET, the performance for transistors...
Defect current of ultrathin oxides after degradation and breakdown was investigated by defect band structure model. The degradation and breakdown of SiO2 can be modeled as a one dimensional linear chain of N identical defects with a effective Bohr radius ad separated by a distance R between electrodes. The degradation occurs when the defect distance ratio (?? = R/ad) local reaches a transition value...
Off-state leakage current in a 65 nm partially depleted (PD) floating-body (FB) SOI technology is modeled and analyzed with emphasis on its drain-voltage dependence. Modeling accuracy of the off-state leakage current is highly dependent on modeling of parasitic currents, although their direct contribution to the leakage may be negligible in lower-power/high-performance technologies. The underlying...
The leakage current mechanism in Schottky contacts (SCs) to Al0.25Ga0.75N/GaN heterostructures incorporated by thin high-temperature (HT) AlN interlayer has been investigated using current-voltage measurements, atomic force microscopy, and deep level transient spectroscopy. The HT AlN interlayer thickness has a significant effect on the leakage current in SCs. The leakage current density is reduced...
BiFexCr1-xO3 (x=0.4~0.6) thin films were formed on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition. The spin-coated, dried and calcined films were finally annealed in a mixed gas of N2 and O2 (N2:O2=4:1) at 450, 500, 550 and 600??C. X-ray diffraction analysis revealed that polycrystalline grains of BiFeO3 and BiCrO3 coexist in the films, and that double perovskite Bi2FeCrO6 crystallites...
In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH4, N2O and C2F6 precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film...
Characteristics of inorganic and organic ferroelectric thin films are discussed from viewpoints of ferroelectric random access memory (FeRAM) applications. It has been found in BiFeO3 films formed by chemical solution deposition that the leakage current at high electric field decreases significantly by substituting Mn atoms for Fe atoms. In these films, well saturated hysteresis loops in P-E (polarization...
To help overcome limits to the density and speed of conventional SRAMs, we have developed a five-transistor SRAM cell. The newly developed CMOS five-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 18% smaller than a conventional six-transistor SRAM...
Large current carrying capabilities of AlN/GaN/InN based heterostructures and high breakdown voltages make this materials system uniquely suited for applications in high power and/or high frequency electronic devices, including power amplifiers, broadband amplifiers, power switches, and radio frequency switches. AlGaN/GaN insulated gate transistors have additional advantages of extremely low leakage...
This paper presents a cost-effective low power 45 nm bulk technology platform, primarily designed to serve the wireless multimedia and consumer electronics need. This technology platform features carbon co-IIP in the nMOS halo, laser annealing scheme, stress liner on the 45??-rotated wafer (<100>) for process simplicity to achieve high device performance and low leakage together. Drive current...
The thin gate dielectric behavior for CMOS devices was investigated. The linear correlation of thickness measured by optical and XPS can still work for ultrathin gate oxide with thickness less than 10 angstrom. Electrical properties, including EOT, NBTI, mobility and Ion-Ioff, were strongly correlated with nitrogen concentration within oxide and the oxide thickness measured by XPS. It is the purpose...
Future devices will be fabricated with high-k/metal gate stack and possibly employ 3D devices and/or high mobility channel materials. Gate stack research targeted for devices scaled to 32 nm and beyond should address the compatibility with scaled CMOS technologies in addition to the EOT scaling of High-K dielectric itself. This paper discusses recent progress and challenges in high-k dielectric for...
We report the successful assessment of both dielectric semiconductor interface, and transistor channel sheet charge densities through the device leakage current characteristics of a MIS GaN HEMT structure. The unconventional test vehicle and procedure described here provide ferroelectric hetero-junction device properties not obtainable using traditional characterization tools.
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