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For future 65 nm and smaller nodes, thermal anneal processes in the ms and mus range are required. Based on laboratory tests using the line scan method, an R&D system has been developed.
Design considerations for quasi-planar, high-Q, silicon-on-insulator microphotonic resonators are presented. A figure of merit for use in comparison between microphotonic designs is presented and applied to compare existing and proposed designs.
We experimentally observed the self-distortion of picosecond pulses propagating in silicon wire waveguides. The asymmetry of output pulse shape was due to two-photon absorption generated free carriers within the pulse duration.
SiGeC alloys are used to realize high performance compact integrated photonic devices, such as electro-optic modulators and photodetectors, on Silicon at near-IR wavelengths with performances that exceed those of conventional designs.
We have reported periodic pore formation with diameter in 80 nm and aspect ratio above 250 on N+(100) silicon substrate and demonstrated the fabrication of silicon 3-dimensional microstructures by applying double directional etchings method.
Using terahertz magneto-photoconductive spectroscopy, we investigate impurity migration effects in barrier-doped GaAs/AlGaAs quantum wells. A new segregation decay rate for Si impurities in AlGaAs is determined for samples fabricated at low epitaxial growth temperature.
Using reverse biased p-i-n diode structure, we efficiently reduced nonlinear absorption and achieved continuous-wave lasing in silicon waveguide cavities based on stimulated Raman scattering. We report here the lasing characteristics for different laser cavity configurations.
We present new class of waveguides with metamaterial cores. In contrast to conventional structures, our system propagates light on subwavelength scale and provides effective nano-to-micro coupling. The design is scalable from optical to THz frequencies.
We review major developments that have led to a high performance, polarization independent, microphotonic circuit. The design and fabrication of complex high-order microring-resonators, along with techniques to freely manipulate polarization states on-chip are presented.
We demonstrate a 20-mum-radius disk resonator based on Si/SiO2 slot-waveguide. Quality factors around 1,000 are measured. Low effective refractive index evidences light guiding in the low index SiO2 layer.
Micron-size channels have been made inside silicon by femtosecond laser-assisted HF etching. The etching is guided by localized carriers generated via two-photon absorption. Its potential of 3-D drilling has been demonstrated.
Utilizing soft-lithography based nanofluidics and silicon nanophotonics we demonstrate ultracompact tunable spectral filtering. Liquid based addressing and high refractive index modulation of a single row of holes within a planar photonic crystal is demonstrated.
We map a laserpsilas internal temperature structure for the first time, identifying separate heat sources due to contact heating and nonradiative recombination and using this technique to compare degradation mechanisms for GaAs-based and Si-based lasers.
We demonstrate infrared lasing operation for the first time of solution-processible colloidal nanocrystal quantum dots. The 1.53 mum emission wavelength of the whispering gallery mode laser was temperature insensitive up to 250 K.
Output performances of the injection-seeded narrow-linewidth nanosecond pulsed deep-ultraviolet coherent light source we developed here are discussed with the optogalvanic spectroscopy of silicon atoms. The spectroscopy indicates its potentials useful for controlling atomic waves resonantly.
We determine the relative phase between bulk and surface contributions to second-harmonic generation (SHG) from Si(001) by exploiting the difference between right- and left-handed q-polarization, and by frequency-domain interferometric SHG.
We investigate slow-light enhancement of stimulated Raman scattering in monolithic silicon photonic crystal defect waveguides. The applied Bloch-Floquet formalism demonstrates remarkable gain enhancements up to 104 at the band-edges, while considering disorder, absorption and coupling.
The second- and third-harmonics enhancement in birefringent silicon-based photonic crystals and microcavities at the photonic band gap edge due to fulfilment of phase matching condition is controlled due to anisotropy of porous silicon dielectric function.
We demonstrate strong cross-phase modulation in Si photonic wire waveguides using picosecond pulses. We present an all-optical scheme for control of optical pulses, utilizing the tight optical confinement of wire waveguides to enhance the nonlinearity.
A 740nm electro-luminescent ITO/SiOx/p-Si/Al MOS diode with Si nano-pyramids synthesized at SiOx/Si interface is demonstrated with turn-on voltage, threshold current, output power, and lifetime of 50 V, 1.23 mA/cm2, 30 nW, and 10 hrs, respectively.
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