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We demonstrate critically coupled silicon microring resonators with intrinsic Q close to 300,000 and mode volume Vap20times(lambda/ne)3. For sub-mW optical power, large pump induced resonance shifts were observed for applications in all-optical switching.
Using near-degenerate optical parametric oscillator operating at ~2 microns as a dual-wavelength pump source, we generated tunable THz radiation near 2 THz, at a microwatt power level, with TM0 propagation mode of a planar GaAs waveguide.
We demonstrate ultrafast self- and cross-absorption saturation and self-phase modulation based on near-infrared intersubband transitions in GaN/AlN quantum-well waveguides designed to minimize the nonlinear switching energy.
We report on the successful operation of an analogue computer designed to factor numbers. A sequence of shaped femtosecond pulses is used to implement a Gauss sum . N = 1psila340psila333psila404psila807 has been successfully factorized.
Ultrashort pulse light-matter interactions in a semiconductor are theoretically investigated within the regime of resonant optical rectification. Using 5 fs pulse envelope areas of around 1.5-3 pi, a single-shot dependence on carrier-envelope-offset phase.
With femtosecond-pulse excitation, two- and three-photon absorption induced ultraviolet lasing with spectral linewidth 0.2-1 nm have been realized under very low excitation threshold from ZnO nanorod arrays at both room and liquid nitrogen temperatures.
We provide expressions for the absolute emission rate of photon pairs produced in SPDC when all interacting fields are in a single transverse Gaussian mode.
The pulse energy fluctuation of a kilohertz femtosecond laser was reduced from 1.33% RMS to 0.28% RMS, which improves the carrier-envelope phase stability from 500 mrad to 200 mrad.
We present a simple, compact, microfluidic system that easily facilitates diode laser bar optical trapping for cell stretching measurements and particle sorting within flowing microfluidic systems for the first time.
Starting from terahertz time-domain spectroscopy, we obtain electric field vector images at each frequency component. We then synthesize images for diffraction from a single slit for an arbitrary incident waveform by inverse Fourier-transformation.
Millimetre wave radio-over-fibre links using both singlemode and multimode fibres are demonstrated over a 0-50 GHz bandwidth operating at 1550 nm. Results show that good link gain can be achieved with both single mode and multimode detectors.
Resonant terahertz reflection of periodic metallic rectangles is investigated. The reflection resonance, primarily attributed to dipolar localized surface plasmons, is influenced by a number of factors and is well fit by the Fano model.
Optically thin terahertz metamaterials made from Pb split-ring resonators are investigated. The LC resonance emerges at a critical metal thickness near 0.15 skin depth and exhibits a characteristic evolution with increasing thicknesses at sub-skin-depth level.
We investigate characteristics of waveguide using highly-reflective semiconductor in the Restrahlen band. We identify spectral operating regions within the Restrahlen band of a cladding layer that offers advantages over both traditional dielectric waveguide and metal clad waveguides using surface plasmon polaritons.
Wavelength conversion in coupled quantum wells driven by terahertz fields has been studied using a model that includes the effects of band structure, excitons and intersubband transitions. Good agreement is achieved with published experimental data.
We have revealed the picosecond dynamics of lower alcohols by employing terahertz time-domain attenuated total reflection spectroscopy and have found that there exists no temperature-dependent relaxation in terahertz frequency region.
BiB3O6 has been found to be 90deg phase-matchable for type-I and type-2 chi(3) third-harmonic generation at 0.3263 and 0.3837 mum at 20degC. The improved Sellmeier equations that correctly reproduce the new data are presented.
Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. Such unique characterization plays a significant role in identifying candidate samples for laser cooling.
Magnetic radiation from intense parametric scattering in different insulators exhibits the intensity dependence and saturation predicted by a simple classical theory, but growth rates vary with molecular structure.
Chirp analysis of color-less RSOA transmitter with 2-3 ASE injection-locked modes for 1.25 Gb/s metropolitan WDM-PON network reaching BER of 10-9 under receiving power below -29.5 dBm and power penalty of <0.1 dB after 25 km transmission is demonstrated.
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