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We report our investigation of catastrophic optical damaged high power multi-mode InGaAs-AlGaAs strained quantum well (QW) lasers using electron beam induced current (EBIC), focused ion beam (FIB), and high-resolution transmission electron microscope (HR-TEM) techniques.
We demonstrated CW laser operation of GaN-based VCSELs under current injection at 77 K. CW laser action was achieved at a threshold current of 1.4 mA, emitting at 462 nm with a narrow linewidth of about 0.15 nm.
We present the concept and first results of a continuous wave room temperature operating electrically pumped GaSb-based VCSEL with buried tunnel junction as current aperture. Laser emission has been achieved at 2.3 mum.
We report the first room temperature CW operation of two dimensional single-mode edge-emitting photonic crystal Bragg lasers. Single-mode lasing with single-lobed, diffraction limited far-fields is obtained for 100mum wide and 550 mum long on-chip devices.
Rectangular ring lasers based on an active vertical coupler structure are fabricated through asymmetric double shallow ridge and ICP/ICP cascade etching. 25% reduction of Ith and the single mode operation with SMSR 23dB are achieved.
We propose and demonstrate a modelocked bi-directional VECSEL with a double V cavity configuration. The laser generates 1.04 mum optical pulses with a 0.76 GHz repetition rate and a total average output power of 4 mW.
We report on the integration of semiconductor ring lasers with tunable directional couplers to modulate the Q-factor of the ring cavity. Active Q-switching is demonstrated with 120 ps pulses, up to frequencies of 1.8 GHz.
We present a detailed characterization of the semiconductor ring-laser operating regimes with special emphasis on the response to optical injection. Applications to an optical set/reset bistable memory and four-wave-mixing tunable THz signals generation are demonstrated.
Modulation response of multi-spatial-mode semiconductor mode-locked lasers is studied by using coupled multi-mode rate equations and the analysis agrees well with previous experimental results that show the modulation response well beyond the relaxation-oscillation-resonance limit.
Sensitive single-pass transmission measurements for probing the electron distribution of Quantum Cascade lasers under an applied bias are used to extract the intersubband nonparabolicity and single-pass gain of a lambda~10 mum Quantum Cascade laser.
For developing a 1-mum waveband photonic-transport system, we fabricated a harmonically mode-locked semiconductor laser (MLL) RZ-signal source. We successfully demonstrated a 10-Gbit/s error-free transmission over a 7-km single-mode hole assisted fiber (HAF) at 1035- nm.
A dynamic model of passive mode-locking in quantum-dot laser diodes is presented. It is found that in contrast with quantum-well lasers, rapid gain recovery is key for mode-locking of quantum-dot lasers.
An alternative to the sub-100 MHz repetition rate laser source is explored. A low noise SCOWA-based harmonically mode-locked laser is developed and temporally demultiplexed to twice the cavity fundamental resulting in a 40 MHz pulse train.
We achieved a record high index sensitivity of 400 nm/RIU in a cw photonic crystal nanolaser with a potential spectral linewidth of 0.1 pm order. We also demonstrated spectrometer-free sensing utilizing nanolaser array.
Mid-infrared interband cascade lasers with 11-mum-wide ridge width and Au electroplating operated cw to 288 K, where the emission wavelength was 4.1 mum. Another device emitted at 5.1 mum and operated cw to 229 K.
High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 mum at room temperature are reported. Devices operate in continuous-wave regime with output power above 200 mW and 80 mW at 250 K and 285 K, correspondingly.
We describe the design and fabrication of a lambda/4 phase-shifted laterally-coupled distributed-feedback laser. The third-order grating for distributed-feedback is fabricated without regrowth using stepper lithography, a process that is amenable to high-yield, low-cost manufacturing.
The structures, processing methods and challenges, experimental results, and spectral analyses for patterned quantum dot lasers and nanopore ordered array lasers are presented and compared with otherwise identical quantum well laser diodes.
External-cavity mode-locking of a quantum-dot laser is demonstrated with record-low repetition-rates of 310 MHz, and harmonic repetition-rates up to 4 GHz. Fourier-limited 930 fs pulse generation is achieved. The pulse-energy of ~0.45 pJ is independent of operating conditions.
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
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