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This paper describes a novel RF CMOS-MEMS switch that integrates RF MEMS switches and CMOS control circuits. A single-pole 8-through RF CMOS-MEMS switch was fabricated and its operation at 3.3 V supply voltage was achieved. The switch was encapsulated with a thin film at wafer level to prevent destruction during packaging. Experimental results confirm that the switch has mechanical reliability for...
An ultra-thin phase-change bridge (PCB) memory cell, implemented with doped GeSb, is shown with < 100muA RESET current. The device concept provides for simplified scaling to small cross-sectional area (60nm2) through ultra-thin (3nm) films; the doped GeSb phase-change material offers the potential for both fast crystallization and good data retention
The authors demonstrate a novel 6.6% high-efficiency CMOS compatible piezoelectric aluminum nitride (AlN) thin-film based integrated β-radioisotope-powered electro-mechanical power generator (IREMPG). the authors integrate silicon betavoltaics with radioisotope actuated piezoelectric unimorph converters to efficiently utilize both kinetic energy and charge of the emitted beta particles for electrical...
The paper investigated the thin film stress effect on the wire-bond assembly yield and reliability. ESD layouts that utilize the bond pad area increase the thermomechanical stress of the thin-films in the pad area and affect the assembly. Experimental data on products with different metal layout designs are compared to characterize the assembly yield and reliability performance. A computer finite...
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