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High performance LSTP CMISFETs with poly-Si/TiN hybrid gate and high-k dielectric have been studied. Gate depletion is successfully suppressed by in-situ phosphorus doped poly-Si gate for NMIS and by TiN metal gate for PMIS. Vth control for pMIS is accomplished by fluorine implantation into substrate. Optimization of HfSiON formation and TiN removal process is the key to achieve high-reliability....
The interaction of epitaxially strained SiGe and super annealing or millisecond anneal in high performance PFET fabrication was, for the first time, systematically investigated. When super annealing was applied, the quality of SiGe/Si interface, affected by subsequent ion implantation and post-SiGe thermal treatment, played an important role in SiGe strain relaxation incurring channel stress loss...
It is reported for the first time that the anomalous gate edge leakage current in NMOSFETs is caused by the lateral growth of Ni silicide toward the channel region, and this lateral growth is successfully suppressed by the control of the Ni silicidation region using the Si ion implantation (Si I.I.) technique. As a result, the anomalous gate edge leakage current is successfully reduced, and the standby...
A solution of utilizing an N-rich SiON gate dielectric toward achieving highly reliable pMOS is demonstrated. The solution consists of a combination of two techniques: (1) a SiN-based gate dielectric with oxygen-enriched interface (OI-SiN) enabling nMOS and pMOS characteristics superior to plasma-nitrided oxides (PNO) and (2) a dual-core-SiON technique in which SiON in pMOS is selectively thickened...
A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, is evidenced
The paper demonstrates large effective work function (Phieff) modulation towards Si band-edges based on physical and chemical nature of interfacial impurities at Ni-FUSI/SiON and HfSiON interfaces. The authors clarify the influence of Ni-silicide phase on the Phieff modulation with dopant segregation. Phieff of 4.14 eV is obtained with a combination of phosphorous ion implantation last (IIL) doping...
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