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The short length effect on the electromigration (EM) lifetime is a valuable resource to increase current limits in advanced circuits. We model the effect with variable (current density j sensitive) current exponent n for short leads and calculate how much lifetime margin should be observed for a certain EM rule relaxation. The shorter leads have larger (variable) n so that the EM lifetime decreases...
The paper presents a comprehensive study of the impact of NBTI on SRAM Vccmin stability. The authors describe a novel simulation technique to predict the between - die statistical distribution of Vccmin drift due to NBTI. While the drift is a fundamental phenomenon, it was shown that by cell design and transistor process optimization, the drift can be reduced to tolerable levels
The conduction mechanisms in chalcogenide materials for phase-change memory (PCM) applications are studied. A trap-limited transport model for sub-threshold conduction in the amorphous chalcogenide is presented, and extended to threshold switching in the amorphous phase and transport in the highly-conductive crystalline phase, providing a fully-comprehensive, analytical model for PCMs. Finally, a...
A physical model enabling accurate prediction of the retention in localized trapping nitride memory devices is presented first. The crucial components of this model are a correct observation of the charge distribution before and after cycling, and a thorough understanding of the charge detrapping and redistribution occurring in the nitride. The model is then validated for a large range of temperatures...
We quantitatively examined current high-density DRAMs to identify the physical origin of the so-called variable retention time phenomenon, which is characterized by bistability of the data retention time of a DRAM bit. Experimental and theoretical analyses led us to supporting a vacancy-oxygen complex defect model. On the basis of the model, we achieved significant improvements in the VRT bit rate...
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