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The relationships between velocity, v, and mobility, μ, are investigated to clarify the effectiveness of μ enhancement to increase v in short channel FETs with SiO2 as well as high-K gate dielectric. The v-μ relationships were extracted on the basis of accurate understanding of v-μ dependence of μ; vsub dependences of μ in high-K, high Nsub, and short-channel FETs were carefully studied and the deviations...
Carrier velocity in the MOSFET channel at the top of the barrier near the source (virtual source) is the main driving force for improved transistor performance with scaling. This paper uses an analytical model that relates MOSFET intrinsic delay to key technology parameters and presents a methodology for extracting those parameters from literature benchmark papers. A historical trend of channel velocity...
A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, is evidenced
We demonstrate, for the first time, a HfLaSiON/metal gate stack that concurrently achieves the following: low threshold voltage (VT =0.33V), low equivalent oxide thickness (EOT=0.91nm) (Tinv =1.3nm) and 83% SiO2 mobility. Key enablers of this result are 1) La doped HfSiON for n-FET VT tuning 2) HfO2:SiO2 alloy ratio with 10% SiO2 suppressing crystallization up to 1070degC, 3) interlayer SiO2 (IL)...
This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility
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