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Feasibility of high density probe-based memory with polycrystalline ferroelectric media has been demonstrated for next memory applications beyond sub-10 nm generation. Noble chemical-mechanical-polishing (CMP) method was employed to fabricate a very even surface on polycrystalline MOCVD Pb(Zr,Ti)O3 (PZT) media. On the CMP processed PZT media, domain dot array was able to be written and read even at...
High-performance CMOS-FinFET with dopant-segregated Schottky source/drain (DS-Schottky S/D) technology has been demonstrated. Thanks to the low parasitic resistance in DS-Schottky S/D, high drive current of 960 muA/mum was achieved for nFET with Lg = 15 nm and Wfin =15 nm at Vd= 1.0 V and Ioff= 100 nA/mum. Furthermore, the propagation delay time has been successfully improved down to less than 5 ps...
GAA TSNWFET with 15 nm gate length and 4 nm radius nanowires is demonstrated and shows excellent short channel immunity. p-TSNWFET shows high driving current of 1.94 mA/mum while n-TSNWFET shows on-current of 1.44 mA/mum. Merits of TSNWFET and performance enhancement of p-TSNWFET are explored using 3D and quantum simulation
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