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In this paper the thermal conductivities of monocrystal carbon, silicon, and germanium nanometer thin film are simulated respectively using non-equilibrium molecular dynamics (NEMD) method and corresponding Tersoff potential energy function. The simulation results indicate that the thermal conductivities of those nanometer thin films are obviously lower than the corresponding thermal conductivities...
The solid phase epitaxial regrowth of structurally modified amorphous silicon created by self-ion implantation into nanovoided crystalline silicon is investigated. It is demonstrated that although the modified amorphous silicon is fully reconstructed into single crystal during the epitaxial regrowth, both activation energy and atom attempt frequency for the regrowth are much higher than those of the...
For better understanding of the essential removal mechanisms of brittle material and stress distribution at high speed and ultrasonic elliptical vibration assisted cutting conditions at the atomic level, the single crystal silicon, expected as a next generation semiconductor material for wide band cap, high-voltage and low-loss power devices, MEMS components and so on, is analyzed by molecular dynamics...
The photonic properties of the silicon-on-glass (SOG) nano-films are analyzed first and the reason why SOG nano-films are required for the nanophotonics is pointed. Then the method to fabricate silicon-on-glass nano-film materials for the applications of nano photonics is established. Anodic boning and selective etching are employed. SOG-based nano-films are then studied.
In this paper, a MEMS method is developed to form suspended nano beams in 10 nm order width and thickness. The dimension of the nano beams is controlled precisely by employing traditional anisotropic self stopping etching instead of popular nano fabrication method such as e-beam lithography, which presents an opportunity for the future low cost batch product. The I-V measurements indicate that the...
Described in this paper is a novel method to fabricate the isolated nano-beams in the normal (111) Si wafers. The cantilever and the double clamped beams with nano thickness are anchored through the metal wires, which are isolated to the substrate electrically. The thickness of the beams is determined by dry etching. The beams are released by KOH etching. As the bottom of the beams is (111) plane,...
Carbon nanotube (CNT) is found to be an amazing material for nanoelectronics due to its unique properties. It provides the possibility of miniaturizing the traditional electronic elements. Recently, people have been focusing on exploring its applications on optoelectronics because CNT is a direct bandgap material and its bandgap is inversely related to its diameter. Thus, it is ease for photon adsorption...
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