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This paper report on the reliability properties of microwave-plasma deposited ultrathin high-k gate dielectric (ZrO2 ) films on strained-Si/SiGe layers. Stress induced leakage current; trap centroid and charge trapping behavior under constant current and voltage stressing in both polarities have been studied
The leakage current in electrically stressed MOS structures with ultrathin lanthanum oxide (La2O3) films was investigated. The samples were obtained by the electron-beam evaporation technique and annealed in-situ in ultra-high vacuum conditions. We show that the application of successive voltage ramps leads to a set of current-voltage (I-V) characteristics that can be simulated using a power-law model...
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