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This paper proposes a low-power logarithmic resistance sensor for multi-level cell phase-change memory readout. The proposed sensor is composed of a resistance-to-current converter (R2I) and a current-to-digital converter (I2D). A simple bleeding current source pair added to the R2I enhances the current settling speed and the sensing accuracy. The two-step I2D with a time-to-digital converter-configured...
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