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N-channel polysilicon-gate FETs have been fabricated in a laser-melted silicon-on-SiO2-on-PLZT structure. Channel mobilities in the devices are 50cm2/Vs with threshold and source-to-drain breakdown voltages as expected from the dielectric thickness and channel doping used. PLZT wafers subjected to the same processing temperatures still show an excellent electro-optic effect.
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