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A junction termination method adopting heavily doped p-well rings with a shallow trench for each ring, named as a trench multiple floating limiting rings (TMFLRs), is analyzed and fabricated without any additional process in 4H-SiC junction barrier Schottky diode. A breakdown voltage of 6.7 kV is achieved using TMFLRs structure on an epitaxial layer with thickness of 50 $\mu \text{m}$ , while the...
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