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A novel trench insulated bipolar transistor (TIGBT) is proposed, where a p-layer beneath the trench gate is introduced to form a self-biased pMOS and provide an additional path for the hole current. In the on-state, the drain-to-source voltage of the trench nMOS is clamped, which helps to decrease the saturation current. In the blocking state, the reverse voltage is sustained by the junction of p-layer/n-drift,...
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