# IEEE Transactions on Nuclear Science

IEEE Transactions on Nuclear Science > 2006 > 53 > 4-1 > 1825 - 1833

IEEE Transactions on Nuclear Science > 2006 > 53 > 4-1 > 1939 - 1944

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3575 - 3578

^{2}/mg

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3321 - 3328

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3502 - 3505

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3512 - 3517

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3242 - 3252

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3329 - 3335

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3158 - 3165

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3487 - 3493

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3363 - 3371

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3422 - 3427

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3563 - 3568

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3372 - 3378

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3738 - 3744

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3237 - 3241

^{60 }Co gamma rays at doses up to 6 Mrad(SiO

_{2}). The threshold voltage shift at 6 Mrad is less than 10 mV in transistors with a gate length of 0.3 mum. At 6 Mrad(SiO

_{2}), the current drive reduction in the same devices is 10% if V

_{G}=0 V during irradiation and 20% if V

_{G}=1 V during the irradiation. The generation of positive charges in the BOX increases...

IEEE Transactions on Nuclear Science > 2006 > 53 > 6-1 > 3182 - 3186

IEEE Transactions on Nuclear Science > 2007 > 54 > 4-2 > 1010 - 1017

IEEE Transactions on Nuclear Science > 2007 > 54 > 6-1 > 2480 - 2487

IEEE Transactions on Nuclear Science > 2007 > 54 > 6-1 > 2257 - 2263