# IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > C1 - 2370

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > C3

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2562 - 2570

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2429 - 2436

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2475 - 2480

_{3}N

_{4}passivation are used to investigate the behavior of surface- and buffer-induced CC, respectively. It is found that the degree of surface-induced CC in unpassivated devices has a weak temperature dependence, which is induced...

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2614 - 2619

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2700

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > C2

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > C4

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2620 - 2627

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2470 - 2474

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2645 - 2651

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2695 - 2699

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2571 - 2578

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2587 - 2592

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2396 - 2403

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2390 - 2395

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2445 - 2449

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2555 - 2561

IEEE Transactions on Electron Devices > 2015 > 62 > 8 > 2384 - 2389