# IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices > 2014 > 61 > 8 > 3001 - 3003

_{2}, HD

_{3}), second- and third-order intermodulation distortion (

IEEE Transactions on Electron Devices > 2014 > 61 > 8 > 2628 - 2632

_{4}Ti

_{3}O

_{12}(BNT) gate insulators were fabricated. The electrical properties of BNT films and SWCNT/BNT TFTs were investigated. The subthreshold swing, the threshold voltage, the channel mobility, and the ON/OFF ratio of SWCNT/BNT TFTs reach to 62.5 mV/decade, 0.45 V,

^{2}/Vs, and

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IEEE Transactions on Electron Devices > 2014 > 61 > 8 > C1 - 2611

IEEE Transactions on Electron Devices > 2014 > 61 > 8 > C2

IEEE Transactions on Electron Devices > 2014 > 61 > 8 > 2674 - 2681

_{0.85}Ge

_{0.15}fully depleted-SOI tunnel FET (TFET) devices operated in the electron-hole bilayer (EHB) mode. The application of negative bias on front gate and positive bias on back gate results in confined hole and electron layers that are expected to enable vertical band-to-band tunneling (BTBT). The idea of the EHB-TFET device is to enhance the tunneling current by expanding the...

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_{2}with a higher

_{2}(

_{2}) also shows a lower leakage current...

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