# IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices > 2015 > 62 > 1 > 192 - 199

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_{4}Se

_{3}S single crystal has been successfully produced. The current–voltage curve analysis has shown that the current conduction mechanism is mostly governed by the Richardson–Schottky mechanism. The width of the effective interface region of the p-n junction was found to be

_{4}Se

_{3}S crystals...

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IEEE Transactions on Electron Devices > 2015 > 62 > 1 > 23 - 27

^{−}/p

^{+}structure was contained in SLBS device, in which n

^{−}is made of 4H-SiC. This n

^{−}layer is FD. Hot carrier (HC) effects (HCEs) in proposed SLBS nMOSFET were simulated and compared with that in FD SoI nMOSFET. In this paper,...

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_{1–x}Ge

_{x}source, so that the germanium amount at the source/channel interface could be correlated with the prevailing transport mechanism and its impact on transconductance...

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