# IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices > 2014 > 61 > 7 > 2486 - 2494

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_{x}/Ge MOS interfaces: 1) carrier trapping due to surface states; 2) surface roughness scattering; and 3) electron transfer into the

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_{2}H

_{6}and PH

_{3}, respectively, to form the abrupt doping profiles in epitaxial Ge on Si substrate. The diffusion process without ion implantation damage is demonstrated by the nearly ideal diode characteristics for the first time. The Ge diodes doped by the boron layer and the phosphorous layer have...

IEEE Transactions on Electron Devices > 2014 > 61 > 7 > 2287 - 2293

_{x}/HfO

_{2}gate-stacks. The model is based on the electron-phonon interaction governing the trapping/emission of injected electrons at the preexisting defects in the dielectric stack. The model successfully reproduces the experimental time dependences of the

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IEEE Transactions on Electron Devices > 2014 > 61 > 7 > 2398 - 2403

_{2}(HfAlO) prepared by atomic layer deposition is investigated as gate dielectric for low-voltage organic thin-film transistors (OTFTs). The HfAlO film exhibits a low leakage current density of

_{2}counterpart. In addition, copper phthalocyanine (CuPc) OTFT with HfAlO dielectric has an...

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^{+}–p–n

^{+}structure. In addition, for the first time to our knowledge,...

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_{2}(0.17