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A high order curvature-compensated CMOS bandgap voltage reference(BGR) is presented in TSMC 0.35μm CMOS technology with low power low temperature-coefficient(TC) and high power supply rejection ratio(PSRR). The design is used in low dropout regulators which is applied in implanted chips. TC is compensated by adjusting resistor ratio which have different temperature characteristics. A PSRR enhance...
Energy efficiency is at the heart of the EU's Europe 2020 Strategy for smart, sustainable and inclusive growth and of the transition to a resource efficient economy. Energy efficiency is one of the most cost effective ways to enhance security of energy supply, and to reduce emissions of greenhouse gases and other pollutants. Nowadays intelligent home energy management is an approach to build centralized...
This paper proposes a novel method to derive the junction temperature of a Silicon Carbide Schottky Barrier Diode (SiC SBD) when it is in operation. There is a correlation between the switching waveforms and the temperature, due to the material parameters and the carrier vary with the temperature. Estimating the Turn-on-delay time as a temperature sensitive electrical parameter (TSEP), the chip temperature...
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