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This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative capacitance effect. In hysteretic devices, subthreshold slope as steep as 10mV/dec is achieved in the region where the ferroelectric represents an...
Ferroelectric hafnium oxide (HfO2)attracted a lot of interests since its discovery in 2007. Its scalability and CMOS compatibility are two advantages over conventional ferroelectric materials, favoring new device integration. Doped ferroelectric HfO2 Metal/Insulator/Metal capacitors have been widely studied for DRAM and FeFET applications. Silicon electrodes have not been discussed in much detail...
The hysteresis in the gate transfer characteristics of transistors made of two-dimensional materials is one of the most obvious problems of this novel technology. Here we attempt for the first time to develop a physical modeling approach for describing this hysteresis in devices based on two-dimensional materials. Our model is based on a drift-diffusion TCAD simulation coupled to a previously established...
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