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We report temperature dependent transport properties of back-gated graphene TLM structures in a wide temperature range from 35 K to 450 K. We use gold as the contact material and find that the contact resistance exhibits a strong temperature dependence, dropping considerably to a value of 315±127 Ωμm at 35 K as compared to 957±210 Ωμm at 450 K measured at the Dirac point. This significant drop in...
In this paper, wafer level transfer of graphene on to a dielectric substrate is demonstrated based on SiO2-SiO2 fusion bonding and de-bonding processes. The developed technique allows to transfer graphene on 200 mm wafer without any contamination; thus CMOS compatible. The experimental data verifies the successful transfer of the graphene on to another substrate with high quality and a yield value...
The availability of graphene and related two-dimensional (2D) crystals in ink form, with on demand controlled lateral size and thickness, represents a boost for the design of printed heterostructures. Here, we provide an overview on the formulation of functional inks and the current development of inkjet printing process enabling the realization of 2D crystal-based heterostructures.
A compact model for the low and high resistance state conduction characteristics of electroformed capacitors with hexagonal boron nitride (A-BN) as insulator material and with multi-layer graphene and metal electrodes is presented. The model arises from an approximation of the expression for multi-filamentary electron transport with parabolic shaped constrictions. The model takes into account the...
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