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Low-frequency noise characteristics have been investigated in arrays of 14 nm gate-all-around vertical silicon junction-less nanowire transistors. Extensive measurements have been performed to study the evolution of the 1/f noise as a function of bias for nanowire arrays with different nanowire diameters and several numbers of nanowires in parallel. Measured drain current noise can be explained well...
In this work, we propose for the first time a Verilog-A physics-based compact model of Random Telegraph Noise (RTN) in Resistive Random Access Memory (RRAM) devices. Starting from the physics of the RTN mechanism in both high (HRS) and low (LRS) resistive states, and combining experimental data with physics-based simulations, we develop and validate a complete compact model of RTN in RRAM devices...
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