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Failure analysis on static condition (static leakage and standby current level) failed device would not cost long time to find root cause, but dynamic functional failure will. Failure analysis with dynamic strategy to localize a failure point is more significant in complicated function failed IC (Integrated Circuit). This paper would present an efficient strategy to locate the defect using dynamic...
To realize higher spatial resolution than conventional SEM-based nano-probing system, a novel Electron Beam Absorbed Current imaging system was newly developed using a Hitachi HD-2700 200 kV dedicated STEM. Its specimen holder accommodates a mechanical probe for current detection and TEM grid specimen. This holder also has a micrometer-based coarse positioning and piezoelectric-elements-based fine...
Resistive Random Access Memory (RRAM) can be regarded as a promising candidate on the manipulation of both electrical and magnetic properties. There is a widespread concern about the electrical manipulation of magnetic properties in RRAM devices. In our work, Co/HfO2/Pt RRAM device with magnetic conductive filament (CF) is designed and fabricated. Then the anisotropic magnetoresistance (AMR) effect...
As the development of semiconductor process, more and more advanced technologies were applied in the IC manufacturing. The device becomes more precise, and more sensitive to the minor process variation. Failure analysis challenge comes along with these advanced processes. Lithography process is one of the most critical semiconductor processes. The issue with this process has its own property. Based...
In this study, a four-layer stacked chip simulation model is built under standard JEDEC environment, the heat dissipation path and temperature distribution of the stacked chip is analyzed. Based on linear superposition method, a method of estimating the temperature of stacked chip using thermal resistance matrix is proposed, and the function relationship between the power consumption and the element...
Software scan diagnosis has been the de facto approach to narrow down possible defect locations in logic circuits by virtue of its speed and effectiveness. However, this capability is not supported for all product yield engineering and custom electrical failure analysis is naturally relied on. By this approach, unless the defects are gross, fault localization of internal logical nodes can be challenging...
In this work, ESD immunity enhancement for the HV n-channel LDMOS with source-end discrete islands fabricated by a TSMC 0.25 μm 60 V process was investigated. An nLDMOS device always has poor ESD capability. If discrete n+ islands are formed in the source end of an nLDMOS transistor, the It2 value of this DUT is upgraded by 4.92% as compared with that of the reference nLDMOS. Meanwhile, if an nLDMOS...
A semiconductor wafer becomes the integrated circuit including many steps and ion implantation is one of the important steps. Due to wet chemicals have different etch rate for doping agent, wet stain chemical etch has shown to be an effective method in finding abnormal implant profile in the implanting area. The etch depth and profile can be used to determine implant defect in active area. In this...
In the present study, Ge2Sb2Te5 thin films have been deposited on Si (100) substrate by magnetron sputtering. We investigated microstructure and texture formation of Ge2Sb2Te5 thin films during annealing. Our characterization results show that face-centered cubic (fcc) rock-salt structure formed in 250 °C annealed thin films, and both fcc and close-packed hexagonal (hcp) structure exist in 350 °C...
In this paper, Focus Ion Beam (FIB) 3-point localization method and its applications in Failure Analysis (FA) were introduced. The FIB capability of material milling plays an important role in FA, but sometimes the target site of milling is invisible in FIB, making it impossible to do specific cross sections. With the help of the proposed 3-point localization method, most invisible targeted sites...
In the analysis of plastic packaging SiP product failure, we should not only consider the plastic material and techniques inherent problems, but also the problem that SiP products have a lot of materials, complex structure, and small surface bonding. A type of plastic packaging SiP module function failure after reflow soldering, through appearance inspection, pin electrical characteristic test, X-ray...
Ultrasonic cleaner is a workhorse in all failure analysis labs for residue removal after decapsulation or etching. In this paper, we present a novel method of ultrasonic decapsulation, where acid mixture was used in conjunction with ultrasonic agitation and was discovered to provide exceptionally high quality preservation of the surface of the copper bond wires which exceeds the quality of laser decap...
In semiconductor manufacturing for automotive as for many other industries, reliability tests are designed and implemented in order to predict failure rate in real life and applications. Physics-of-failure is used on the rejects observed in field and during the reliability tests to check them to stress the components as in life applications. Besides this qualitative study between field and reliability...
ESD protection design for the RF transmit/receive switch (T/R switch) with embedded silicon-controlled rectifier (SCR) is proposed, where the SCR device is embedded in the ESD diode and the transistors of T/R switch by layout skill. Silicon chip verified in a 90-nm CMOS process has been measured by TLP and HBM ESD test to confirm its efficiency for ESD protection. The parasitic capacitance from the...
Recently, FInFET is introduced to deliver products with higher speeds and power efficiencies. Due to its 3D structure, FinFET results in complexity during the failure analysis process. Conventionally, the failure analysis (FA) starts with electrical failure analysis (EFA) to isolate the fault and follows by the physical failure analysis (PFA) to find the root cause. However, for the advanced technology,...
The effects of fast neutron radiation up to flux of 1014 cm−2 (1 MeV equivalent flux) upon the turn-on and forward static characteristics of MOS-Controlled Thyristor (MCT) are described in this work, based on physics-based 1-dimension analytical calculation and 2-dimension Silvaco simulation. It is reported for the first time that dependency of on-state specific resistance (Ron) upon neutron flux...
LIHT (Lack Injection of Hole Termination) structure is proposed and studied. Compared with conventional termination structure, the novel structure features a partial N-doped anode in the transition region and termination region instead of a whole P-doped anode. The LIHT structure stores less carries in the drift region of the transition region and termination region, in which holes concentration reduced...
Contamination and Electrical Overstress are typical failure modes that may appear in failed devices. However, the clean exposure and excellent preservation of such failure sites is often found challenging or even impossible due to the limitations of the decapsulation techniques and tools available. The accuracy of failure analysis can be jeopardized during decapsulation due to the introduction of...
The application of techniques utilizing transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and energy dispersive spectroscopy (EDS) to identify the interface and defect property in GaN based materials is presented. Several parameters including STEM camera length and probe size were demonstrated to have significantly influence on image contrast and layer thickness,...
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