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In this paper, we present the experimental I-V and C-V characterization of vertical trench DMOS with different gate electrode recess depths. NBTI/PBTI test, via static bias stress test method was also performed in order to identify possible contaminations of the channel region. Effects of increasing this recess depth on the main electrical and capacitance performances are accurately measured. We concluded...
Laser voltage imaging (LVI) and laser voltage probing (LVP) are laser stimulation techniques to verify a device under test (DUT) and have been widely used for scan chain circuit debugging and various frequency-dependent failure modes. In the case of complex logic failures in advanced technology nodes, defect localization continues to be a challenge in the failure analysis field. Dynamic electrical...
This paper demonstrates integration non-destructive analysis tools solution of MEMS multi-bonding to inspect the fusion bonding interface and eutectic bonding interface to locate defect layers. This analytical study shows successful SAT (Scanning Acoustic Tomography) and IROM (Infrared Optical microscopy) inspection of MEMS multi-bonding single issue layer. The multi-bonding double layers were happened...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material-related description of the most relevant defect-related phenomena in dielectrics (charge trapping and transport, degradation and atomic species motion) to interpret the reliability and electrical characteristics of logic and memory devices. The model is used to identify and characterize the dielectric...
Photon Emission Microscopy is the most widely used mainstream defect isolation technique in failure analysis labs. It is easy to perform and has a fast turnaround time for results. However, interpreting a photon emission micrograph to postulate the suspected defect site accurately is challenging when there are multiple abnormal hotspots and driving nets involved. This is commonly encountered in dynamic...
This study investigates the bias temperature instability in high-k/metal-gate pMOSFETs with a TiN barrier layer sandwiched between the metal gate electrode and HfO2 dielectric and for reliability improvement of such devices. The experimental results clearly demonstrated that the diffusion mechanism of oxygen and nitrogen resulting from the post metallization treatment was the root cause of bias temperature...
In this study, we demonstrate the use of the extended spectrum of the short-wave infrared DBX Emission System to detect thermal emission with a high enough resolution to perform physical failure analysis. The case study was performed on a 16nm technology System On Chip (SOC) memory access circuitry. Multiple optical filters were used in the analysis in order to isolate the few emission spots that...
A surface layer formation by Cs+ bombardment was observed during ultra-thin oxynitride gate dielectrics depth profiling. A significant thickness change relative to ultra-thin layer of oxynitride was noticed when testing a bombarded sample after a period of time. Cs, O and N depth profiles were examined by Dynamic Secondary Ion Mass Spectrometry (DSIMS). The bombarded sample and new sample were investigated...
Segmentation technique for optimizing the holding voltage of SCR is discussed and implemented in a 0.6μm SOI process. Based on the prior researches, the holding voltage of SCR is a key parameter for latch-up risk assessment. The segmented SCR with external resistor paralleled with the parasitic Ptub resistor is proposed by modifying the layout, and the holding voltage can be increased. The TLP characterization...
In this study, impact of traps located at SiO2/Si interface on the time-dependent dielectric breakdown (TDDB) lifetime is investigated by modeling the Weibull distribution in high-k (HK) dielectric stacks. The results show that the interface traps will cause the distortion of Weibull slope of TDDB lifetime, decreasing the growing rate of the probability of breakdown after a long time.
The case study is focus on one of the assembly defect which is invisible during 1st level for analysis. Root-cause finding involved assessment until die level analysis.
In this study, a comparison of the interfacial adhesion strength of Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiN)/Cu and High-Density Plasma Chemical Vapor Deposition (HDP CVD) SiN/Cu was performed using the 4-Point-Bending (4PB) technique. Differences in critical energy release rate value Gc, which is an indicator of the interfacial adhesion strength, were observed. The...
In this study, we compared the basic switching behaviors of HfO2, Al2O3 and HfAlOx (Hf:Al=9:1) based RRAM with Ti top electrode by setting various compliance currents (1mA, 5mA, 10mA, 15mA). The resistance ratio of HfO2 based RRAM (20 → 320) increases with compliance current whereas it drops not obviously for Al2O3 based RRAM (85→54). HfAlOx (Hf:Al=9:1)) based one has the best resistance ratio (300–440)...
In this paper, we studied the Al bondpad qualification methodologies and application in backend process optimization and improvement so as to provide good quality bondpads and wafers in wafer fabrication. The three Al bondpad qualification methodologies including OSAT, SLAT and Wafer Die Sawing Test were introduced and discussed.
In this work, the high temperature (up to 375°C) dynamic characteristics of 1.2kV SiC VDMOS, including the gate charge, the switching and the body diode reverse recovery characteristics, are measured and analyzed in detail. The experiments show that, with the increase of temperature, the Miller plateau declines, the reverse recovery charge rises, the turn-on time decreases and the turn-off time increases...
The three-dimensional (3-D) NAND flash memory technology has been considered as a promising candidate for future memory solutions, because it overcomes the scaling limitation and reliability issues faced by conventional planar memory. Even though 3-D NAND flash memory structures have many merits, self-heating effect is aggravated seriously due to the poor thermal conductivity of some of the materials...
This paper discussed the applications of electron energy loss spectroscopy (EELS) for element characterization in semiconductor manufacturing. The first experiment compared the ability of element chemical states analysis between EELS and X-ray photoelectron spectroscopy (XPS). Some phase change random access memory (PcRAM) product suffered TiN connection electrode failure. EELS and XPS were used separately...
Transmission electron microscopy (TEM) is one of the most important characterization techniques in semiconductor failure analysis. However, preparation of a good TEM lamella for analysis has great challenges and requires a well-thought-out sequence of steps. The normal TEM sample preparation procedures, though time consuming, can fulfill majority of the sample requirements, but sometimes there are...
In this study, we implemented the backside PLS (Photoelectric Laser Stimulation) based circuit edit on an analog circuit block of a mixed-signal IC (Integrated Circuit). In this technique, a laser with the wavelength in the NIR (Near Infrared) range is employed to optically stimulate the DUT (Device under Test) at the transistor level, and impact optically its electrical performance including threshold...
An advanced sample preparation protocol using Xe+ Plasma FIB for cross-sections wider than 400 μm is proposed. Challenging samples such as a BGA (CSP) or chip in a package often suffer from FIB milling artifacts. The results are unsatisfactory mainly due to different milling rates of the various materials (polyimide, tin, copper), ion beam induced ripples or due to significant topography. The process...
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