The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper describes the use of Lock-In Thermography (LIT) technique to determine the defect Z-depth in flip chip. An empirical phase shift versus applied lock-in frequency plot for Flip-chip is first created by using samples with known defect Z-depth. The actual experimental phase shift data from reject samples with unknown defect locations are then measured and compared against the empirical phase...
A previous study on long term reproducibility [1] demonstrated that CAMECA Wf can delivered the relative standard deviation (RSD) of the relative sensitivity factors (RSF) of boron (B) are typically 3.7%. Above results show that deviation can be estimated without testing the standards. This paper will demonstrate that the SIMS RSD depend significantly on the species concentration.
With process technology development and circuit density rapidly increases, shrinkage of semiconductor device geometries has become extremely difficult to effectively analyze defect. Therefore, an exactness failure analysis process flow and technique need to be considered in order to analyze the failure mechanism, especially complex failure analysis such as failure of open/floating signal net in logic...
Scanning microwave impedance microscopy (sMIM) is an emerging electrical mode for scanning probe microscopy (SPM). We apply the technique to the profiling of dopants in semiconductor samples with sub-micron spatial resolution. This work demonstrates the practical application of sMIM for quantitative measurement of the dopant concentration profile in production semiconductor devices. A planar dopant...
In this study, we introduce high-resolution X-ray tomography into the daily failure analysis (FA) work flow for semiconductor packages. Two application cases, the investigation of Back-end of line (BEOL) and μ-bump features have been selected to demonstrate its advantage. The paper focuses on a feasibility study for different measurement parameters and proposes an advanced FA flow including newly-developed...
Thin film deposition process invariably introduces compressive or tensile stress in the films. The stress in a film causes the wafer to warp whose curvature is estimated in a wafer fab using optical reflectance technique. Alternatively, the wafer curvature can also be measured using the high resolution XRD (HRXRD) Si(004) rocking curves. In this paper, the HRXRD technique was employed to evaluate...
Conductive atomic force microscopy (CAFM) was used to investigate nano-electric performances of semiconductor MOS (metal-oxide-semiconductor) devices. Due to the small tip size (as small as ∼20 nm for PtSi probes), CAFM is capable of imaging both topography and current information of nano-device structures simultaneously with very high lateral resolution. Due to the use of wide ranges of current amplifier...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.