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In this paper, analysis of the gate recess variation on DC and RF characteristics on 0.25um psuedomorphic high electron mobility transistor using Sentaurus TCAD simulation have been carried out. Hydrodynamic transport model have been employed for the simulation. Furthermore, off state breakdown characteristics are also exploited, while exploring the essential features of 2-dimensional electron gas...
In this work, presence of multi-trap energy (MTE) levels in the GaN energy bandgap of AlGaN/GaN HEMT is studied based on conductance method as well as temperature-dependent current transient measurements. Using conductance method, it is observed that the MTE model shows a better fit with the measurement data as compared to the single-trap energy (STE) model. Temperature-dependent current transient...
In this study, the maximum spatial resolution of infrared thermal imager is 3 μm, and the gate length of AlGaN/GaN HEMTs is between 0.2 μm and 1 μm. Therefore, the infrared thermal imaging instrument measurement results are only an average temperature that is lower than the actual temperature. By combining infrared thermal imaging with Sentaurus TCAD simulation, the junction temperature of AlGaN/GaN...
In this study, we investigate the Ron degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate via an accelerated step stress at different temperatures. We have observed a three-phase Ron degradation behavior, which is highly correlated with a drain bias and back gate bias. First, the Ron degradation increases till a peak value when the drain bias increases. Second, when the drain bias increases...
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