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This paper highlights systematic fault isolation approaches to identify back-end of line metal bridging through the combination of techniques such as photon emission, soft defect localization, laser voltage probing as well as combinational logic analysis, to successfully pin point a single metal layer for physical failure analysis, thus boosting the overall success rate and turnaround time.
In this paper, a novel signal toggling technique in Electrical Optical Frequency Mapping/ Phase Mapping (EOFM/EOPM) and Electrical Optical probing (EOF) are performed to successfully localized the fault location and identify the physical defect promptly. A function square wave is asserted into the pin of interest, i.e. leakage pin or the function power pin, for EOFM and EOF purposes. This technique...
Today's complex integrated circuits demand tight process control in manufacturing. In this paper, several case studies due to slight process deviation resulting in yield loss from marginal leakage failure were presented. While conventional fault isolation approach relies on the localization of exclusive laser induced or photon emission hotspot to highlight the defect location and pays little attention...
With process technology development and circuit density rapidly increases, shrinkage of semiconductor device geometries has become extremely difficult to effectively analyze defect. Therefore, an exactness failure analysis process flow and technique need to be considered in order to analyze the failure mechanism, especially complex failure analysis such as failure of open/floating signal net in logic...
Focused Ion Beam, also known as FIB, is a technique that widely used in semiconductor field. The common purpose is to do circuit modification, layout verification, micro-circuit failure analysis, mask repair and Transmission Electron Microscope (TEM) specimen preparation of site specific locations [1]. Backside fault isolation is a method to get optimum transmission and localized failure site. Fault...
A simulation study is conducted to model the behavior of the MOS transistor output response with a resistive defect on gate, with both DC and pulse signal inputs. Nanoprobing is performed on actual transistors in DC and pulse modes to validate the simulation. Compared to a reference transistor, a more resistive gate corresponds to a larger rise time in the dynamic pulse response, while the static...
Software scan diagnosis has been the de facto approach to narrow down possible defect locations in logic circuits by virtue of its speed and effectiveness. However, this capability is not supported for all product yield engineering and custom electrical failure analysis is naturally relied on. By this approach, unless the defects are gross, fault localization of internal logical nodes can be challenging...
Failure analysis is very important in semiconductor business not only for customer satisfaction but also for process improvement and new product development. A successful failure analysis depends mainly on accurate failure verification, appropriate fault isolation techniques, and precise physical analysis steps implemented on the specimen. However, the trend in package development of current ICs makes...
Electro optical techniques including EOFM (Electro Optical Frequency Mapping) and EOP (Electro Optical Probe) are common dynamic optical probing techniques used during failure analysis. This paper demonstrated two real cases to show the application of these techniques on the fault isolation of high resistive vias.
This paper describes the use of Electrical Optical Frequency Mapping (EOFM) in amplitude and phase mode to binary search the broken scan cell and missing clock activities in scan-chain failure for Application-Specific Integrated Circuit (ASIC) die inside the sensor device. Due to the smaller size of the ASIC die at the bottom stack of the GCELL and the Evaluation Board (EVB) design which not favorable...
This work discusses visible light laser voltage probing (VIS-LVP) and gallium phosphide solid immersion lens (GaP SIL) research for Integrated Circuit (IC) analysis at Technische Universität Berlin. An overview of the challenges in connection with the ultra-precision fabrication of GaP SILs and their application is given. The use of visible light is not only opening a path for fault isolation in small...
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