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Dynamic changes in distribution of mechanical strain generated during wire bonding in Si under and near the bonding pad were measured by using a piezoresistive linear array sensor. The sensor was designed to be able to determine strains in the directions normal and parallel to the surface. Bonding dynamics of Cu and Au balls were investigated. We can clearly observe the oscillating strain according...
This paper describes the role of sulphur on corrosion phenomena at the interface between the Cu ball and Al bondpad. Sulphur is usually linked to the adhesion promotor which is used to improve package robustness and second bond reliability, but can have other detrimental effects. A variety of techniques such as (in-situ) HTSL, chemical analysis of sulphur and performing a DOE with compound variants...
We have developed a novel fan-out wafer level packaging (FOWLP) technology for high-performance and scalable flexible and biocompatible substrates that we call FlexTrate (TM). We demonstrate the technology with the assembly of 1-mm-sqaure 625 (25 by 25) Si dielets on a biocompatible Polydimethylsiloxane (PDMS). By using the new FOWLP technology, die-die interconnects with a pitch of 10 mm or less...
In this paper, we describe the performance and power benefits of our Fine Pitch integration scheme on a Silicon Interconnect Fabric (Si IF). Here we propose a Simple Universal Parallel intERface (SuperCHIPS) protocol enabled by fine pitch dielet to interconnect fabric assembly. We show the dramatic improvements in bandwidth, latency, and power are achievable through our integration scheme where small...
Silver (Ag) bond wires are increasingly used in semiconductor components to replace gold (Au) bond wires, and applications for these components are expanding from consumer to high-reliability electronic systems. To assess the impact of this technology transition on the overall component reliability, extended reliability testing beyond the typical JEDEC component qualification testing is needed. Additionally,...
This paper presents, for the first time, a novel silicon damascene like via-in-trench (ViT) interconnect for panel-scale package redistribution layer (RDL) configuration. The panel scale damascene RDL in this paper comprises of ultra-fine copper embedded trenches and microvias with diameter equal to the width of trenches using a 5 µm thick dry film photosensitive dielectric. A 140 µm thick glass substrate...
For memory devices, focus has been on Ag alloybonding wire as a low-cost alternative to Au bonding wire. However, Ag bonding wire has lower long-term bond reliabilitythan Au bonding wire under high temperature and humidityconditions. Past research has mainly been concerned withenhancing the bond reliability by Pd doping into the Agbonding wire. On the other hand, Ag-Pd alloy bonding wire haspractical...
There are increasing interest in high temperature endurable sensor or device packaging solution for a set of wide ranging applications that include oil and gas production or deep sea exploration, advanced automotive application, aerospace, more electric aircraft initiative (MEA) or engine health management (EHM) systems, geothermal energy harvesting as well as other renewable energy industries. Besides...
The wiring system of electronics is often exposed to operational and environmental stress conditions during the lifetime of use condition. As the wiring system ages, these stress conditions degrade the material properties of wires and eventually lead to wire failures that result in arcing and electromagnetic emissions. In order to prevent wire failures, various approaches to diagnosing wire degradation...
We propose a 2.1-D SiP that uses an organicinterposer for HBM applications and describe a demonstration of the technology. This SiP structure consists of a newly developed thin photosensitive insulation film multilayer (organic interposer) on a conventional organic package, enabling the package cost to be well controlled. An HBM interconnect was achieved in just two signaling metal layers with an...
The contact resistance (RC) of Au wires bonded to AlCuW bond pads (98.5% Al, 0.5% Cu, 1.0% W) and pure Al bond pads was measured continuously using the high-resolution resistometric method during multiple high-temperature storage (HTS) tests. Oven storage temperatures from 200°C to 250°C were utilized to accelerate the intermetallic formation and resistance degradation at the bond interface. This...
Copper (Cu) wires are increasingly used in semiconductor devices to provide cost-effective packaging. With its excellent electrical properties, copper has higher mechanical properties than gold (Au) wire. Many of the challenges for Cu wire have been and are being evaluated to meet the stringent quality requirements of the automotive industry. In July 2016, the AEC-Q006 Revision-A document was published...
Recently, the electronics industry is moved maturely on the mobile/tablet market. The next fast growing opportunity market will be the Internet of Things (IoT) and Wearable Deivces in the near future. This advanced technology/package need to provide the ideal solution for small form factor, thin profile, high electrical performance, multi-function integration and low cost are the most critical requirements...
Pd coated copper (PCC) wire and Au-Pd coated copper (APC) wire have been widely used in the field of LSI device. Recently, higher bond reliability at high temperature becomes increasingly important for on-vehicle devices. However, it has been reported that conventional PCC wire caused a bond failure at elevated temperatures. On the other hand, new-APC wire had higher reliability at higher temperature...
Power electronics has a great popularity in many industrial fields. Recently, in automotive industrial fields, the number of demand on electrical vehicles has been extremely rising. Those devices are required to have high thermal performance. However, conventional power device packages using wire are difficult to match that. So we have developed a new and expectable advanced package for power devices...
Vertical stacking semiconductor devices can effectively integrate more functionality in the same footprint. Memory devices are often stacked in 8 and 16 die, and prototypes for up to 64 die have had proven concepts. For many of these devices, wire bonding on unsupported die edge in overhang configurations is required. Controlling the impact force, bonding parameters and lift off force profile are...
Agilent's Vector Network Analyzer VNA was used to obtain the S-parameters up to 67 GHz. The AC resistance was extracted at 3 GHz and 20 GHz, it was found that Ag alloy wire bonds with 3.5 %wt Pd had the least AC resistance. The trends were consistent at both frequencies. It indicates the Ag alloy wire bonds with 3.5 %wt might have a different Pd distribution from other Ag-alloy wires of other Pd percentages...
Aiming for application to the inverter system of HEV and EV, we have developed a novel packaging technique for SiC power devices based on Nickel Micro Plating Bonding (NMPB) technique. We implemented heat resistant mounting of SiC schottky barrier diode (SBD) on the TO247 type package and confirmed the rectifying behavior even after the high temperature storage for 500hr at 250°C without any significant...
In this article we present the conception, technological fabrication and electrical characterization of 3D hybrid pixel detector modules based on read out chips (ROCs) with through silicon vias (TSVs) which are flip chip bonded onto silicon photon sensors for X-ray detection. The TSVs in the ROCs enable a vertical routing of their peripheral IOs to the back side where they are spread to a land grind...
In this paper, a 3D non-linear finite element (FE) model was established to simulate the reliability performance of interconnects and ceramic in a power package under transient thermal loads and tests. There are two manually coupled simulation steps: The first step is transient thermal simulation. Transient cyclic or non-cyclic power loading is applied on the die. The transient temperature data of...
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