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Due to a weak adhesion, the delamination occurred frequently in the interface between the epoxy compounds and lead that results in a performance failure normally. Several treatments, such as plasma and chemical modifications, have been developed and applied to enhance the bonding force in the interface of both materials. In this study, an anchor shape of the lead, as a mechanical locking microstructure,...
A novel and systematic methodology to predict the warpage of extremely thin packages is proposed. The geometrical and material inhomogeneities of both die and substrate are included in the prediction methodology. The inhomogeneous thermo-mechanical properties of dies due to the thermal incompatibility between silicon substrate and active/passive layers are inversely extracted from the Shadow Moiré...
The scaling of package and circuit board dimensions is central to heterogeneous system integration. We describe our solderless direct metal-to-metal low pressure ( 20 MPa. The combined reduction of dielet interconnect pitch, dielet-to-dielet spacing and trace pitch will enable a Moore's law for packaging.
This paper presents the relations between processing, microstructure and mechanical reliability of copper pillar bumps (CuPi). Two sets of samples were manufactured: Cu/SnAg and Cu/Ni/SnAg with diameters between 15 and 20 µm. From the microstructure point of view: at these dimensions and for simulated reflows, up to 5, intermetallic compounds (IMC) follow a classical power law with a time exponent...
Recently, silver solid solution phase with indium, (Ag)-xxIn, has been demonstrated to be one of potential candidates of metallic packaging material for future high-power electronics bonding and interconnection applications due to its great anti-tarnishing property and superior mechanical properties, such as high ductility and high ultimate tensile strength. To further explore and utilize its great...
3D multi-layer chip stacking is a significant assembly challenge with dependencies on die size and thickness, interconnect pitch, bump diameter, number of dies involved, and die warpage. The assembly processes used to overcome the technical difficulties associated with the stacking of medium and large logic dies with fine pitch copper pillar bumps is discussed, including mass reflow and thermo-compression...
In this paper, we describe the performance and power benefits of our Fine Pitch integration scheme on a Silicon Interconnect Fabric (Si IF). Here we propose a Simple Universal Parallel intERface (SuperCHIPS) protocol enabled by fine pitch dielet to interconnect fabric assembly. We show the dramatic improvements in bandwidth, latency, and power are achievable through our integration scheme where small...
A technological multi-chip module with a large silicon interposer has been designed, manufactured and characterized for space and airborne applications. It stands for a reconfigurable advanced calculation device, for up to 10 Gbps data rate. The electrical targets are propagation losses less than 2 dB at 5GHz for the signal path across the interposer and its bumps, signal integrity with enough eye...
This paper demonstrates, for the first time, ultra-thin, panel laminate fan-out (LFO) and glass fan-out (GFO) packages with embedded copper heat spreaders and electromagnetic shields for packaging high-power RF ICs in much smaller form factors and at potentially much lower cost than current ceramic and metal flange packages. This unique double-sided package addresses the thermal dissipation requirements...
This work presents the thermal reliability test results of a metaconductor device on a glass substrate. Custom thermal cycling testing between room temperature and 100 °C has been performed for both Cu/Ni and Cu/NiFe metaconductor based transmission lines. The overall electrical performance has been well preserved between 300 kHz and 12 GHz. After a high temperature annealing treatment with 400 °C...
This paper presents, for the first time, a novel silicon damascene like via-in-trench (ViT) interconnect for panel-scale package redistribution layer (RDL) configuration. The panel scale damascene RDL in this paper comprises of ultra-fine copper embedded trenches and microvias with diameter equal to the width of trenches using a 5 µm thick dry film photosensitive dielectric. A 140 µm thick glass substrate...
In this paper, the pumping behaviors of copper filler from TSV were systematically investigated. First, in-situ observation of copper pumping from TSV was conducted in scanning electronic microscope (SEM), the pumping height of copper filler and its evolution with time and temperature was recorded, it is found that the pumping rate increase with temperature and the maximum pumping height reached 12...
Wide band gap semiconductors have becomevery attractive for power electronics because of their excellentproperties at high power and high junction temperaturesabove 300°C. However, the maximum operation temperaturesof conventional packaging materials, like tin-based solders oreven tin-lead solders, are limited to around 220°C. Thus, a newpackaging material with a higher melting temperature must bedeveloped...
This analysis focuses on two of the primary variations of fan-out wafer level packaging: die-first packaging in which the die are placed face down, and die-last packaging. These two technologies share many of the same activities, but those activities occur in a different order. One key factor setting these two process flows apart is yield. Even with the assumption that the same level of defects are...
Advanced power module packaging technology is currently being heavily investigated to take full advantage of Wide Band Gap (WBG) power semiconductor devices. As one of most widely applied power module technologies, intelligent power modules, typically for automotive industries, work well to achieve higher operating frequencies with lower losses by integrating gate driver circuits with power semiconductor...
Flip-chip interconnects made entirely from copper are needed to overcome the intrinsic limits of solder-based interconnects and match the demand for increased current densities. To this end, dip-based all-copper interconnects are a promising approach to form electrical interconnects by sintering copper nanoparticles between the copper pillar and pad. However, the remnant porosity of the copper joint...
The reliability of copper through-silicon vias (TSVs) has been shown to be largely determined by the microstructure and extrusion statistics, and the mechanism for this requires further investigation. Synchrotron x-ray microdiffraction is an advantageous technique for TSV measurements due to its high beam intensity, which allows for full stress derivation with submicron resolution, and its nondestructive...
Given the recent interest in power delivery design for the Internet of Things (IoT), current work aims to design a packaged power delivery solution for IoT. The power inductor takes up a large amount of the area in such an implementation. Planar power inductors are preferred for fabrication simplicity and cost. However, air core inductors do not have sufficient area efficiency for IoT solutions, necessitating...
Flip-chip bonding has become an efficient method to realize fine-pitch interconnection in high density interconnection applications. Thermal-compression bonding of Cu/Sn microbumps can induce extra thermal stress because of high bonding temperature, long bonding time and high bonding force. Temperature, time and force are expected to be decreased to improve the thermal-mechanical reliability of the...
Silver (Ag) has been emerging as an attractive die-attach material for high power devices because of its highest thermal conductivity among metals and high melting stability. The most well-known silver die-attach technique is to sinter micro-or nano-silver pastes. The challenging issues of sintered Ag joints are pores in the joint and migration of unfriendly species such as chlorine ions through these...
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