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The Gibbs free energy released during the mixing of river and sea water has been illustrated as a promising source of clean and renewable energy. Reverse electrodialysis (RED) is one major strategy to gain electrical power from this natural salinity, and recently by utilizing nanochannels a novel mode of this approach has shown improved power density and energy converting efficiency. In this work,...
The power consumption in electronic devices is the major challenge as increasing the demand of IC chips. To lower the VDD and AC power (PAC), both high mobility material and steep turn-on device technology are useful. The ferroelectric high-κ HfZrO MOSFET can realize not only a small sub-threshold slope (SS) <60 mV/dec for low VDD and PAC, but also a smaller aspect ratio FinFET. The small bandgap...
A CMOS bandgap reference using chopping technique for OPAMP offset cancelling is presented in this paper. The OPAMP used in bandgap was intended to improve the precision of the bandgap, but this aim is in some degree reduced by the input referred offset and 1/f noise of the introduced OPAMP. Thus, an effective architecture which contains three pairs of chopping cells is designed to overcome the issue...
This review demonstrates the potential of low frequency noise diagnostics for the characterization of Ge-based and III–V technologies processed on a Si platform. The analysis of traps in both gate dielectrics and semiconductor films is illustrated for state-of-the-art devices.
This paper describes a novel Ultra-Fast Single Pulse technique (UFSP) [1, 2] for accurate mobility evaluation, including the technique principle, how to connect the device, and how to use the Clarius software in the 4200A-SCS Parameter Analyzer.
Experiments are carried out to investigate the relationship between the robustness of super junction VDMOS (hereafter SJ-VDMOS) and its body diode characteristics. It is found that the voltage overshoot is responsible for the device failure. The mechanism of voltage overshoot has been analyzed thoroughly and some measures to smooth the overshoot are provided. The improved 600V SJ-VDMOS shows a higher...
The frequency dependence of oxide trap coupling effect in nanoscale MOSFETs under AC switching condition is discussed thoroughly, with experimental and theoretical studies. By using AC STR measurement, a decreased tendency of trap coupling strength with increased frequency is observed. Rather than conventional 2-state trap model, it is found that only the explanation based on complete 4-state trap...
This paper presents an ultrasensitive and inexpensive method for ricin detection by surface enhanced Raman scattering (SERS) on shape-controlled gold nanocrystals substrates fabricated by integrating electrodeposition with dielectrophoresis (DEP). The ricin is captured by the rabbit anti-ricin polyclonal antibody which immobilized on the substrates. It was show that the limit of detection(LOD) could...
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