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We present a novel design of bulk transmit-receive (T/R) switch FET to reduce switch loss and harmonics. Along with this we present an improved low-noise amplifier (LNA) bipolar design in a 350nm SiGe BiCMOS technology for providing better WiFi RX path performance in 802.11ac wave-2 applications. Tighter lithography aspects of 180nm is utilized to make these critical performance advancements.
In this paper, we propose a radio frequency lateral double diffused metal oxide semiconductor device with part of stepped buried oxide layer, and establish a model of the surface electric field of the device. From the simulation results, it is concluded that the surface electric field distribution model is basically consistent with the simulation results, and the new peak electric field is obtained...
A 2.2mW splitting low noise trans-conductance amplifier (split-LNTA) current-driven passive mixer for the ultra-high frequency (UHF) radio frequency identifycation (RFID) active tag is presented in this paper. The split-LNTA can alleviate the issues in the conventional current-driven passive mixer utilizing 50% duty cycle local oscillator (LO). So 50% duty cycle LO can be used instead of 25% duty...
A portable counter-assisted all-digital phase-locked loop (ADPLL) with fast settling time is presented in this paper. A wide-frequency-range and high-resolution interpolating digitally controlled oscillator (IDCO) is proposed to satisfy target frequency requirements. Three settling processes with different kinds of loop filters enable both fast settling time and low jitter. The proposed ADPLL has...
The LTE-Advanced and its related market factors present many challenges for the RF power amplifier (PA) and front end designs. This paper reviews some of the emerging techniques such as dynamic supply voltage modulation, reconfigurable PA, FET stacking and power combining to solve these challenges for silicon based PAs. These techniques with advanced CMOS and SiGe technologies can benefit the future...
Radio frequency (RF) energy harvesting circuit using a 20 nm InAs double-gate n-channel TFET has been studied. RF-DC converter using a two-stage cross-coupled rectifier is evaluated. Rectifier power conversion efficiency (PCE) at low input power using TFET shows noticeably better performance compared to its CMOS counterpart. Temperature sensitivity and threshold voltage variation effects on PCE are...
An outdoor air quality monitoring system based on ZigBee wireless sensor network is presented in this paper. A wireless network is formed by coordinators, routers, terminal notes, and especially PPB (part per billion) level high precision sensors. Data, sampled and processed by terminal notes, are sent to routers or the coordinator through a serial port, then displayed on a screen of a PC. The concentration...
In this work we investigate different topologies of transistor cells that consist of a standard SiGe HBT including specifically designed metal stacks in the back-end-of-line (BEOL). Different test structures have been realized on-wafer using a state-of-the-art BiCMOS technology from Infineon and a complete characterization is proposed including DC and large signal characterization at 77 GHz; also...
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