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With bias conditions changed during irradiation, the bias dependence of the total dose radiation response of fully depleted (FD) silicon-on-insulator (SOI) n-channel MOS transistors (NMOSFETs) is investigated preliminarily. It is found that the threshold voltage shift of the FD SOI NMOSFETs as a function of total dose exhibits an abrupt inverse change, namely, a unexpected rapid reduction, with increasing...
A comparative investigation of the reliability of 60Coγ ray irradiation on bulk-Si substrate and SOI substrate double polysilicon self-aligned (DPSA) NPN bipolar transistors is presented. Bulk silicon based DPSA NPN transistors show severe current gain degradation at low injection level, and a monotonic increase in current gain degradation with decreasing Emitter-Base (E-B) voltage is observed. SOI...
0.18 µm narrow channel input/output (I/O) nMOSFETs with shallow trench isolation (STI) were exposed to 60Co γ-ray irradiation. The parameters such as gate current, transfer characteristics, output characteristics, conductance, transconductance, off-state leakage current, threshold voltage and sub-threshold slope are analyzed for pre- and post-irradiation. Test results show that the gate current, transfer...
A comparative investigation of γ-ray total dose ionization damage at high and low-level injection (HLI/LLI) for different dose rate irradiation in double polysilicon self-aligned bipolar NPN transistors is presented. The transistors reveal anomalous dose rate radiation responses for Emitter-Base (E-B) electrical field strength in forward active mode. This effect is probably associated with the different...
This paper presents the 3 MeV proton irradiation results of a 16Mb commercial MRAM. The total ionizing dose(TID) effects induced by proton irradiaton and the following room temperature annealing behaviors are analyzed in detail. Read bit errors and electrical failures were observed when the proton fluence was accumulated to 2.5×1011 particles/cm2. The peripheral circuits are more sensitive to proton...
In this paper, the radiation response of 90nm bulk Si MOS devices irradiated by heavy ions is experimentally studied. Due to the intrinsic random incident of heavy ions, different performance degradation is observed, such as threshold voltage shift, saturation current change and maximum transconductance degradation. These performance degradations may be attributed to the displacement damage in channel...
In this article, the effect of proton irradiation on the DC characteristic of InP/InGaAs heterojunction is studied with varying fluences and proton energies. The current-voltage (I–V) before and after proton irradiation are compared. The result indicates that higher device current is caused by lower energy proton irradiation and the increase of fluences for the proton energy less than 3MeV. The density...
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