The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents a new technique to detect the junction temperature of Silicon Carbide (SiC) MOSFET devices. The process of detection is based on injecting a high frequency/low amplitude sweep signal into the gate lead of a SiC device during its OFF-state period. A frequency response analysis is carried out to determine the variation in the impedance which is a function of temperature change. The...
A new DBC-based hybrid packaging and integration method is proposed in this paper. A multilayer power module is formed by a direct-bond-copper (DBC) and a window cutting printed circuit board (PCB). The SiC chips and PCB are placed and soldering on the DBC. Al bonding wires are used for connecting the chips and the PCB. A full SiC half-bridge power module is designed and fabricated in compact size...
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have the potential to increase the power density in power electronics converters compared to the currently used silicon (Si). Their benefits are higher efficiency, higher switching speeds, and higher operating temperatures. Moreover, SiC MOSFETs, which are normally-off, offer the possibility to directly replace Si Isolated-Gate-Bipolar-Transistors...
Wide bandgap material based power electronics devices including Silicon Carbide MOSFETs, JFETs, and Gallium Nitride HEMTs are poised to change the landscape of the power electronics industry with their superior high temperature capability, low switching loss and low conduction loss. This paper first provides an overview of the development of WBG devices and their applications, then focuses on how...
In-wheel motor is one of the expected electric vehicle technologies which has superiority in the vehicle control aspects. However, the integrated in-wheel motor in which the inverter is integrated with the motor makes thermal problems because of the reduction of cooling area. This paper analyses a cooling system of the inverter integrated in-wheel motor and considers the operating conditions of the...
This paper aims to comprehensively investigate the efficiency, power density and overall cost of input series output parallel (ISOP) medium voltage (MV) all silicon carbide (SiC) DC-DC converter in solid state transformers (SST). The medium voltage capability can be achieved by using either high voltage devices or multiple low voltage cells in series. Voltage rating of semiconductor devices, magnetic...
This paper presents an optimized design of 12kW 2L-FB inverter for small-scale wind turbine, taking into account some specific behavioral features of SiC power MOSFETs. Power converters used in renewable energy conversion have to deal with intermittent and variable power availability from the source, which implies that they actually work at their maximum rated power for only a small fraction of their...
Silicon carbide (SiC) devices attract widespread attention of scholars because of their superior characteristics. However, the interaction between the upper and lower devices during the switching process in the bridge circuit will affect the safe operation of SiC devices. To suppress the crosstalk spurious voltage, this paper proposes a gate driver circuit based on magnetic coupling for SiC devices...
With the widespread use of solar energy, the grid-connected photovoltaic (PV) systems based on solid state transformer (SST) have considerable prospect. This paper presents the design and demonstration of a three-phase 800-V/10-kV 1-MW SST for grid-connected PV system. The topology of the 10-kV/1-MW SST is designed as a modular structure containing the dual active bridge (DAB) converter and full bridge...
This paper presents the assembly and characterization of an integrated all silicon-carbide (SiC) 3-to-1 phases matrix converter, intended for harsh environment withstand capability and highly reliable operation (e.g., renewable energies, solid-state transformation, smart grids, electric transport). Commercial SiC MOSFETs in bare-die form are used to develop custom-packaged bi-directional switches,...
The demand for high-efficiency power converters is increasing continuously. The switching losses are typically significant in power converters. During the switching time, the component is exposed to a considerable voltage and current causing power loss. The switching time is limited by parasitic inductance produced by traces and interconnections inside and outside the package of a device. Moreover,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.