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A physics-based compact gallium nitride power semiconductor device model is presented in this work, which is the first of its kind. The model derivation is based on the classical drift-diffusion model of carrier transport, which expresses the channel current as a function of device threshold voltage and externally applied electric fields. The model is implemented in the Saber® circuit simulator using...
Pulse generator is the critical component in all ultrasound systems for driving a piezoelectric transducer to medical or nondestructive testing (NDT) applications with high-voltage, high frequency bipolar or unipolar pulse train. Other than conventional imaging short pulses, high power transmit ultrasonic system for medical applications requires MHz pulse bursts of up to tens of milliseconds. The...
This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN) transistors based half-bridge circuits. The instability may cause sustained oscillation, resulting in overvoltage, excessive EMI, and even device breakdown. This problem does not occur in silicon or silicon carbide transistors based circuit because of their different reverse conduction characteristics from GaN...
Coss nonlinear behavior of modern power FETs challenges large-signal model development used for DC-DC converter efficiency optimization. Small-signal data available in vendor's specifications could mislead and cause errors. Paper reviews existing modeling approaches and suggests accurate practical large signal Coss models for popular wide bandgap (WBG) FETs based on experimental test setup.
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