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Nanowires are promising candidates for photovoltaic devices due to their large band gaps and reduced electron-phonon interactions. In the present paper, full band Monte Carlo simulations are performed on square In0.53Ga0.47As nanowires along [100] cladded with InP to study the energy relaxation of carriers in these wires. The carriers are optically excited above the band gap of the cladded nanowire...
A ZnO-nanowire photodetector was prepared using three-dimensional through silicon via (TSV) technology. The diameter and depth of the Si via were about 80 µm and 175 µm, respectively. Cu uniformly filled in each TSV, whose average resistance was about 1 mΩ. Upon illumination with UV light (= 330 nm), it was found that measured responsivities is 7.38×10−3 A/W for the 3D TSV ZnO nanowire photodetector...
Layer undulation of InGaAs/GaAs/GaAsP strain-balanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can...
Magnesium nanowires with different morphologies have been successfully prepared by means of physical vapor deposition method, and the influence factors on the formation of these magnesium nanowires have been discussed.
GaAs nanowires fabricated by an anodic etching have some advantages over conventional dry crystal growth and wet chemical dissolution techniques in terms of their formation. However, undesired electrical insulating behavior caused by deep interface states is observed. It is known that the interface states originate from the dissociated As atoms between GaAs core and Ga2O3 outer layer. Here, we investigated...
We present electric field-based in-vitro control of intracellular protein nanowires, so-called microtubules, using a pair of metallic glass (Pd42.5Cu30Ni7.5P20) microwire electrodes. We can reversibly control the spatio-temporal localization, orientation, as well as guided translocation of microtubules suspended in a buffer solution. Using freestanding wire electrodes to localize microtubules allows...
In this work we investigate properties of ultra-narrow photoluminescence lines originating from recombination of excitons trapped by short-range potential fluctuations, caused by alloy disorder in GaAs/GaNAs core/shell nanowires. From power-dependent photoluminescence measurements we show that the emission behavior is consistent with biexciton-exciton cascade recombination in quantum dots. We also...
This paper presented a method of growing metallic nanowires by using electron beam technology under scanning electron microscopy (SEM). The metallic nanoparticles were dispersed evenly on Indium-Tin Oxide (ITO) by the spin coater. The ITO sample was experimentally prepared by the spin coating technique. The electron beam was focused on a metallic nano particle inside SEM, which were dispersed on the...
In this paper we present first principle study on bismuth nanowires (BiNWs) with few nanometers in diameter which indicates that along trigonal crystallographic orientation a large bandgap in the order of few electron-volts is achievable due to quantum confinement. It is shown that there is a considerable dependency of the bandgap opening and surface reconstruction on the orientation. The results...
In this paper we review our recent results on optical properties of coaxial nanowires (NWs) based on dilute nitride alloys, such as GaAsN and GaNP. We show that these structures have a high structural and optical quality, and can potentially be used as polarized nano-scale light sources that emit linearly polarized light with the polarization direction perpendicular to the wire axis even in zinc blende...
Surface effect and nonlocal effect are incorporated into classical Euler beam equation to study the static bending behavior of nanobridges. The generalized Young-Laplace equation and core-shell model are used to model the surface effect. The nonlocal effect is introduced in bending moment equation. Results show that a positive surface tension causes the nanobridge more difficult to bend while the...
In this paper, we present the fabrication and thermal conductivity measurements of a 10 nm-diameter Si nanowires (SiNWs) array for thermoelectric (TE) devices applications. The SiNWs were fabricated by bio-template and neutral beam etching techniques. Then, the SiNWs were embedded into spin-on-glass (SOG) for the measurement of the thermal conductivity. The measured thermal conductivities of the SiNWs...
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