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Two-dimensional materials are layered materials with outstanding electrical and optical properties in atomic thickness. Here we report on a back-gate transistor with a two-dimensional material WSe2 as channel material. Our device shows a significant mobility enhancement by Atomic layer deposition (ALD), from ∼0.95 cm2/Vs to ∼26 cm2/Vs. Moreover, we explored the hysteresis phenomenon in our device...
We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray diffraction peak in θ–2θ scan, and nearly transparent optical response. This work open a window for ex-situ studying quantum size effect in metal film.
Ag/SiO2/Pt memristors are fabricated to investigate their resistive switching characteristics. The devices exhibit stable and reversible nonvolatile bipolar resistive switching behavior under DC voltage sweeps with a current compliance (CC) of 1 mA. Moreover, electroforming process is not required in the first I–V cycle, the values of VSET and VRESET are 0.2 V and −0.2 V, respectively. Meanwhile,...
We introduce a state-of-the-art self-aligned contact (SAC) process and patterning process developed by new patterning technology using Atomic Layer Etch (ALE) and Atomic Layer Deposition towards 5/7nm generation.
In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase...
Transition-metal dichalcogenide (TMDC) monolayer is a very promising two-dimensional material for future transistor technology. TMDC monolayer, owing to the unique electronic properties of its atomically thin two-dimensional layered structure, can be made into a high-performance MOSFET. In this work, we focus on band structure and carrier mobility calculations for typical TMDC such as WS2 and MoS2...
Alumina(Al2O3)-coated segmented polyurethane (SPU) sheet is prepared for the application to bioengineering by using both preparation methods of atomic layer deposition for Al2O3 coating and electrospinning for SPU scaffold sheet. Its fine blood compatibility was performed on in-vivo test during long term.
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