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In this paper, the physical mechanism and models of oxide-based resistive-switching random access memory (RRAM) and the optimization of the devices and arrays are addressed and reviewed. The review focuses on our research achievements on the unified physical mechanism, physical-based models including switching and reliability behaviors, and the optimization design issues of the oxide-based RRAM.
In this paper, we investigate the impact of Ta and Ta2O5 thickness and of thermal treatment for the Ta2O5 layer on the forming and switching characteristics of Pt/Ta2O5/Ta/Pt ReRAM devices. The forming voltage (VFORM) decreases with increasing Ta and decreasing Ta2O5 thickness. However, VFORM saturates (∼ 2 V) for thicker Ta layers. Thinner Ta2O5 switching layer can further reduce the forming voltage...
Phase change memory (PCM) has reached the status of mature technology for stand-alone, embedded, and storage-class memory (SCM). A key requirement for these applications is stability at high temperature (T) during soldering, packaging and operation. To this aim, new materials and algorithms to improve reliability are essential. Here we demonstrate bipolar switching in PCM resulting in low-current...
In this work we demonstrate, for the first time, the advantages of GaN HEMTs on bulk GaN substrates over similarly processed devices on Sapphire and Silicon substrates, intended for power applications, in terms of on-state and off-state operation as well as reliability, where self-heating, off-state leakage, and trapping effects are minimal. MIS-HEMTs with breakdown voltage of ∼670 V and off-state...
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