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We demonstrate the effectiveness and limitations of critical performance elements in silicon channel bulk finFET CMOS devices featuring embedded Source/Drain (e_SD) dual epi. Further scaling of the fin width below 10nm is shown to impact both the access resistance and S/D overlap capacitances while the mobility behavior for both nMOS and pMOS devices further degrades. Epitaxial S/D regrowth options...
FDSOI technologies are very promising candidates for future CMOS circuits as they feature low variability, improved short channel effect and good transport characteristics. In this paper, we review the main electrical techniques and methodologies used to characterize the important MOS device parameters. First, the capacitance-voltage measurements are considered for the vertical stack characterization...
Drain current in Ultra-Thin Body (UTBB) Fully-Depleted Silicon-On-Insulator (FDSOI) device is investigated using Non-Equilibrium Green Function (NEGF) simulations. The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract quantities relevant to Quantum Drift-Diffusion (QDD) solvers, such as the quasi-Fermi level, the quantum potential...
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