The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
While silicon carbide (SiC) is now believed to be a potential replacement to leading horse material silicon (Si) on many power fronts, this paper addresses the merit of SiC material for a diverse range of power applications. Several commercial SiC power modules have been characterized and evaluated under various test conditions and hence strengthening the confidence level of their usage in the field...
In this paper we present an advanced methodology for effective 3-D device electrothermal simulation of power structures and power integrated circuits. The proposed electrothermal simulation is based on direct interconnection of a 3-D FEM thermal model and electrical circuit model of the device using a mixed-mode setup supported in Synopsys TCAD Sentaurus environment. This approach combines the speed...
A new approach for including quasi-ballistic effects into TCAD drift diffusion simulations of short-channel III–V MOSFETs at low longitudinal fields is presented. The model is based on the concept of ballistic mobility through a modified Matthiessen rule. It has been applied to double-gate thin-body InGaAs MOSFETs and benchmarked against multi-subband Monte Carlo simulations. Our results indicate...
We investigated the transport properties of n+-p-n+ liquid-gated Si NW FET biosensors using noise spectroscopy. We found that the gate coupling effect results in the channel position being shifted into the depth of the nanowire when the back gate voltage is applied. It was shown that the noise level and signal-to-noise ratio depends on the selected operating mode. By applying the back gate voltage,...
A bipolar junction transistor (BJT) based sensor is investigated for its sensing characteristics such as sensitivity and signal to noise ratio (SNR). The sensor consists of a bipolar transistor with its base connected to a sensing surface in contact with the solution. Measurements are performed using pH buffer solutions and the sensor sensitivity and signal to noise ratio are shown to be significantly...
We present a high density CMOS neural probe with active electrodes (pixels), consisting of dedicated in-situ circuits for signal source amplification. The complete probe contains 1356 neuron sized (20×20 µm2) pixels densely packed on a 50 µm thick, 100 µm wide and 8 mm long shank. It allows simultaneous high-performance recording from 678 electrodes and a possibility to simultaneously observe all...
We propose and characterize graphene quantum capacitors, tunable with voltage by the control of their charge density, for tunable LC tanks as essential building blocks for Radio-Frequency (RF) functions in densely integrated circuits. We fabricate and investigate their performance in RF, and we demonstrate quantum capacitances, Cq, in the range of pF with a tuning range of >1.3∶1 within 1.25 V,...
Electrical transport and thermoelectric properties of thin indium arsenide nanowires have been investigated in the temperature range between 100 K and 365 K. Charge carrier concentration was varied by a back-gate electrode. In nanowires with a diameter of 20 nm, discrete conductance plateaus are observed at low temperature indicating one-dimensional quantization of the density of states. A mean free...
This paper presents a high temperature integrated amplifier implemented in bipolar 4H-SiC technology. A 40 dB negative feedback voltage amplifier has been designed using the structured design method to overcome the temperature variation of device parameters. The amplifier performance degrades as the temperature increases from room temperature up to 500°C. The measured gain is reduced from 39 dB at...
Ultra-low power systems and circuits are increasingly pivotal for many fast growing segments of semiconductor industry. A confluence of multiple technologies has brought the promising opportunity for pervasive connectivity of people and things closer than ever. Innovative system partitioning, advances in analog and digital circuit design, modern embedded sensing technologies and intelligent power...
This paper will examine challenges in future device scaling and the implications arising from difficulties in delivering scaling benefits from devices to the circuit level, and ultimately up to the system level. These implications will serve to highlight opportunities in design-technology interactions to aid in overall system scaling.
This work presents one of the first low power pH sensing microfluidic chip based on the heterogeneous integration of: (i) high-k FinFET sensors with liquid gate, (ii) miniaturized Ag/AgCl quasi-Reference Electrode and (iii) passive microfluidic. The integration of these three components provides a fully integrated and compact platform that could be exploited for ionic monitoring in biofluids for healthcare...
Micro/nano-electromechanical resonator based mechanical computing has recently attracted significant attention. However, its full realization has been hindered by the difficulty in realizing complex combinational logics, in which the logic function is constructed by cascading multiple smaller logic blocks. In this work we report an alternative approach for implementation of digital logic core elements,...
Resistive switching memories have been identified as an enabling technology for a variety of emerging computing applications, including neuromorphic and logic-in-memory computing. For example, analog tuning of the memory state combined with high integration density of memristors is needed for very compact implementation of synapses, the most numerous devices in artificial neural networks and would...
SCM application gives ReRAM opportunity to become mainstream technology, beyond embedded field. Memory reliability improvement and memory/selector co-optimization are still required. To offer better performance/cost trade-off and differentiate from other technologies are necessary for ReRAM to step forward.
Currently available sensor systems relying on multi-cantilever deflection detection by optical means are generally limited in their functionality by complexity and cost. Several laser sources as well as big sized detectors are needed to record the signal from each cantilever separately. In the frame of the ENIAC Joint Undertaking project Lab4MEMS II our group is currently developing a novel device...
We study the impact of quantum mechanical effects on the fin Electron-Hole Bilayer Tunnel FET (EHBTFET) considering different geometries. Through quantum simulations based on the effective mass approximation (EMA), it is found that the fin EHBTFET is affected by the corner effects at the substrate-fin interface, due to reduced electrostatic control that causes a dramatic reduction of the ON current...
This work reports the results of a layout-aware substrate modeling methodology for HVCMOS technologies. The model relies on the extraction of parasitic substrate network to simulate with circuit software parasitic lateral NPN bipolar transistors with multi-collector configuration. This allows to predict and analyze the injected substrate currents distribution through the chip and to explore different...
We would like to introduce diamond junction field effect transistors for next generation power electronics and magnetic sensing devices by applying advanced diamond device technologies.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.