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In this paper, the efficiency limits of power electronic converters are investigated from a semiconductor point of view. The approach is presented on the example of a hard switching half bridge while taking Si, SiC and GaN devices into account. Beside parasitic effects of the semiconductors itself, further converter non-idealities and limits from a thermal point of view are discussed. All in all,...
This paper presents the analysis of problem as to when the GaN HEMT (Gallium nitride high electron mobility transistor) is applied to power conversion system. Compared to state-of-the-art super junction Si (Silicon) MOSFET (Metal oxide semiconductor field effect transistor), the FOM (Figure of merit) is much better because of heterojunction structure and wide band gap characteristics. However, designing...
Highly efficient multi-cell rectifier using low-voltage GaN transistors has been proposed for future 380-V dc distribution in data centers. A 98.8% full-bridge 33- to 48-V ac-dc cell converter has been developed by using GaN transistors. This cell converter maximizes the performance of the multi-cell rectifier based on the series-parallel connection topology of isolated power converters. The potential...
The common mode (CM) noise mechanism of totem-pole bridgeless PFC converter is analyzed in this paper. The conducted noise performance of a bridgeless totem-pole PFC converter using GaN HEMTs is investigated under experimental conditions: 230V ac input, 390V dc output, and 50kHz switching frequency. The CM noise located around the input voltage zero-crossing of the converter is noticed to be significant...
An accurate circuit and device model is a valuable tool for developing new topologies, building successful designs, and shortening time to market. The input, output, and reverse transfer capacitance of power MOSFET are of vital importance to the MOSFET as they determine the dynamic behavior of the device during switching transients. In this study, the static characteristics of a specific GaN device...
Efficiency and power density are the two most important index of the telecom rectifier development. During recent years, the efficiency of the telecom rectifier is pushed from 92% to 96% and now 98%, this paper however explores the design considerations of super high density (100W/inch3) telecom rectifiers in concert with high efficiency requirements (96%). Specifically, the design considerations...
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