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In this work, we have experimentally demonstrated for the first time, an Analog-to-Digital Converter (ADC) based on the unique voltage-dependent switching probability of a Magnetic Tunnel Junction (MTJ). The switching probability was calculated by applying repetitive voltage pulses and measuring the resolved MTJ states in each sampling time window. Temperature sensitivity and MgO breakdown issues...
Critical switching current, Isw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Qw, becomes the order of 100–150fC. With the small Qw, MRAM starts to save energy consumption by 70–80% compared with a conventional memory system. Analysis of the write pulse-width dependence of Iw revealed a further potential of perpendicular...
A novel damage recovery scheme using the oxygen showering post-treatment (OSP) is proposed to recover patterning damages and to improve electric and magnetic properties of p-MTJs, and its array yield. By applying our OSP to 25nm p-MTJs cell array, the MR was increased from 99% to 116% and the Isw was decreased from 41.1uA to 28.7uA. Moreover, electric short fails of MTJs array due to metallic by-products...
We have developed a perpendicular-anisotropy magnetic tunnel junction (p-MTJ) stack with CoFeB free layer and Co/Pt multilayer based synthetic ferrimagnetic (SyF) pinned layer that withstand annealing at a temperature up to 420°C (that compatible with CMOS BEOL process) by controlling boron diffusion. We demonstrated the 10 nmφ p-MTJ with double CoFeB/MgO interface tolerable against 400°C annealing...
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