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We present a state-of-the-art fabrication technology and physics-based model for molybdenum disulfide (MoS2) field effect transistors (FETs) to realize large-scale circuits. Uniform and large area chemical vapor deposition (CVD) growth of monolayer MoS2 was achieved by using perylene-3,4,9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding. Then, a gate first process results in enhancement...
We demonstrate that fine-pitch TSV technology can be exploited to fabricate micro-inductors on high resistivity substrate, with record-high inductance per area and preserving their performance at GHz frequencies. We report an extensive experimental study on the effects of dimensional scaling and passive device density on RF performance of out-of-plane inductors exploiting W-based TSVs, with pitches...
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