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A performance upgrade of our 14nm FDSOI technology is reported in this paper. Compared to our previous 14nm FDSOI assessment, a −17% delay at the same leakage is demonstrated. We show that the AC performance of 28nm FDSOI at a 0.9V supply voltage is reached at 0.6V in 14nm FDSOI technology. This corresponds to a 50% increase in frequency at the same dynamic power, or a 65% power saving at the same...
Vertical nanowire logic circuits may enable device density scaling well beyond lateral CMOS layouts limited by gate and contact placement. In this paper, we compared the performance, layout efficiency, SRAM design, and parasitics between vertical (VFETs) gate-all-around (GAA) transistors with lateral (LFETs) targeting 5nm. We reviewed some of the unique considerations of VFET device and circuit influences.
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