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Modulation of field emission current from ZnO nanowires (ZnO NWs) by a high voltage amorphous silicon thin film transistor (HVTFT) is reported. The emission current was modulated in about three orders of magnitude. Precise control and stabilization of emission current were achieved.
ZnO nanowires were treated with ammonia(NH3) plasma. Electrical and field emission properties of the same individual ZnO nanowire were investigated before and after NH3 plasma treatment. Lowered work function, increased resistance and lowered turn-on field was observed. Ammonia molecule substitutional defect on Zn site was attributed to the observed phenomena.
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