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NEA GaAs photocathodes with high quantum efficiency (QE) and high response speed are expected as a electron source for THz frequency vacuum devices. To achieve high QE and high response speed, further understanding of the electron emission mechanism is necessary. This study focused on the formation process of NEA surface on a GaAs photocathode. The results suggests that NEA surface allows the electron...
A photocathode based on n-doped graphene emitters in series to a GaAs photoswitch was fabricated and used for pulsed field electron emission. The n-doped graphene array emits at low turn-on fields (< 3 V/µm). A fast photomodulation of the emission current with high on/off ratio ∼200 was achieved with a semi-insulating (s.i.) GaAs photoswitch in a diode configuration. Different laser sources were...
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