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A high gain low noise amplifier for radiometrie applications in the W band has been designed in 28 nm bulk CMOS technology and characterized experimentally. The design of pads, inductors, capacitors, coplanar waveguides and interconnect lines has been carried out by means of electromagnetic simulations. The parasitic effects of the transistor layout have been evaluated by means of electromagnetic...
The complexity of a radiofrequency (RF) circuit design comes from the large number of parameters to be adjusted. The constant node shrink in CMOS process and variation of technology skills significantly contribute to this complexity. The paper reports on a reliable and portable design methodology based on the inversion coefficient and applies it to the design of a Low Noise Amplifier (LNA). Both meeting...
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